A Finite-Memory Nonlinear Model for microwave electron devices

Filicori, F.; Vaisnini, Giorgio; Santarelli, Alberto

doi:10.1109/euma.1997.337835

Cited by 2 publications

(3 citation statements)

References 8 publications

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“…Very similar results are also obtained for the other admittance matrix elements and for a great variety of bias conditions. This is not surprising since extrinsic parasitic effects cause very often such a kind of resonance in most devices observed in the -domain, while the regular frequency behavior of the internal active slice admittance is consistent with physical hypothesis of short memory conditions, which usually hold for the "intrinsic part" of microwave and millimeter-wave devices [30]- [34]. Thus, direct frequency extrapolation of measured device scattering or admittance parameters would lead to very inaccurate prediction results.…”

Section: Frequency Extrapolation Of the Modeling Approachmentioning

confidence: 91%

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Millimeter-wave FET modeling using on-wafer measurements and EM simulation

Cidronali

Collodi

Santarelli

et al. 2002

IEEE Trans. Microwave Theory Techn.

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Abstract-Electron device modeling is a challenging task at millimeter-wave frequencies. In particular, conventional approaches based on lumped equivalent circuits become inappropriate to describe complex distributed and coupling effects, which may strongly affect the transistor performance. In this paper, an empirical distributed FET model is adopted that can be identified on the basis of conventional -parameter measurements and electromagnetic simulations of the device layout. The consistency of the proposed approach is confirmed by robust scaling properties, which enable millimeter-wave small-signal -parameters to be predicted as a function of the device periphery and number of gate fingers. Moreover, it is shown how the model identified on the basis of standard -parameter measurements up to 50 GHz can be efficiently exploited in order to obtain reasonably accurate small-signal prediction up to 110 GHz. Extensive experimental validation is presented for 0.2-m pseudomorphic high electron-mobility transistors devices.

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Section: Frequency Extrapolation Of the Modeling Approachmentioning

confidence: 91%

“…To this end, mathematical black-box approaches such as those proposed in [30]- [34] can be adopted quite easily. Otherwise, it is obviously possible to use a suitable nonlinear equivalent-circuit structure to model the active slices [36].…”

Section: Discussionmentioning

confidence: 99%

Millimeter-wave FET modeling using on-wafer measurements and EM simulation

Cidronali

Collodi

Santarelli

et al. 2002

IEEE Trans. Microwave Theory Techn.

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“…The finite-memory nonlinear model (FMM) proposed in [12] meets the above requirements instead, since it is directly derived, without any constraint on the physical device structure, by means of an adequately accurate approximation on the current/voltage dynamic functional relationship under the hypothesis of the short duration of the memory effects that correlate the instantaneous values of the current at the intrinsic device to the past-applied voltages. This is possible since the "slow" dynamic phenomena associated with self-heating and charge-trapping are explicitly taken into account, and separately dealt with, in the voltage-controlled functional-based description of the device behaviour.…”

Section: Introductionmentioning

confidence: 98%

Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena

Filicori

Santarelli

Traverso

et al. 2005

Int J RF and Microwave Comp Aid Eng

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Theoretical and practical issues concerning the nonlinear dynamic modelling of electron devices are discussed in this article. All the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation. In particular, both the "fast" dynamics associated with charge-storage phenomena at high operating frequencies and the "slow" dynamics of low-frequency dispersion, due to device self-heating and "charge-trapping" effects in deepbulk and surface regions, are simultaneously taken into account. The result is an empirical, technology-independent and nonquasi-static model of electron devices, suitable for a simple and reliable identification procedure and based on conventional measurements of static characteristics and bias-and frequency-dependent small-signal parameters. The model implementation in the framework of commercially available CAD tools is also outlined in this article. Experimental validation, based on a GaAs p-HEMT, is also presented.

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A Finite-Memory Nonlinear Model for microwave electron devices

Cited by 2 publications

References 8 publications

Millimeter-wave FET modeling using on-wafer measurements and EM simulation

Millimeter-wave FET modeling using on-wafer measurements and EM simulation

Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena

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