A first principle calculation of electronic and dielectric properties of electrically gated low-buckled mono and bilayer silicene

Mohan, Brij; Kumar, Ashok; Ahluwalia, P. K.

doi:10.1016/j.physe.2013.05.014

Cited by 55 publications

(40 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because of this large bond length compared with the graphene bond length, the π-π overlaps for silicene become weaker than those graphene and then it produce a buckling form in silicene structure. The value of buckling value for silicene sheet obtained 0.61 Å, which is comparable with other theoretical calculations [49]. Also, functionalized of silicene with the H, CH3 and F groups produced a larger bond length than bare silicene and as a result, the buckling value for functionalized silicene became larger.…”

Section: Resultssupporting

confidence: 87%

See 1 more Smart Citation

Band gap engineering in silicene: A theoretical study of density functional tight-binding theory

Zaminpayma

Nayebi

2016

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 87%

“…Table 1 shows the geometry parameters for relaxed converged lattice structure. [23,28,44,[47][48][49][50]. Because of this large bond length compared with the graphene bond length, the π-π overlaps for silicene become weaker than those graphene and then it produce a buckling form in silicene structure.…”

Section: Resultsmentioning

confidence: 99%

Band gap engineering in silicene: A theoretical study of density functional tight-binding theory

Zaminpayma

Nayebi

2016

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

“…In spite of these generally accepted features, recent theoretical works have shown that there exists a stable phase of single-layered silicon with graphene-like structure either in a flat or in a slightly puckered configuration [1][2][3][4][5][6][7][8][9][10]. A single-layered silicon with graphene-like structure is recently called ''silicene''.…”

Section: Introductionmentioning

confidence: 99%

Structures of quasi-freestanding ultra-thin silicon films deposited on chemically inert surfaces

Baba¹,

Shimoyama²,

Hirao³

et al. 2014

Chemical Physics

View full text Add to dashboard Cite

a b s t r a c tSilicon thin films were deposited on a sapphire and a highly oriented pyrolytic graphite (HOPG), which have atomically flat and chemically inert surfaces. The electronic and geometrical structures of the films were analyzed by X-ray photoelectron spectroscopy (XPS) and polarization-dependent X-ray absorption fine structure (XAFS). It was found that the silicon K-edge XAFS spectra for ultra-thin silicon films thinner than 0.2 monolayer exhibited two distinct resonance peaks which were not observed for bulk silicon. The peaks were assigned to the resonance excitations from the Si 1s into the valence unoccupied orbitals with p ⁄ and r ⁄ characters. The average tilted angle of the p ⁄ orbitals was determined by the polarization dependencies of the peak intensities. It was demonstrated that direction of a part of the p ⁄ orbitals in silicon film is perpendicular to the surface. These results support the existence of quasi-freestanding singlelayered silicon films with sp 2 configuration.

show abstract

“…Recently, few-layer silicene with buckled honeycomb lattices have been successfully synthesized on Ag(111), Ir(111) and ZrBi 2 surfaces. 3,4 According to first-principles calculations, [5][6][7][8][9]15,18 these buckled structures might be meta-stable. Both AB and AA stackings, being characterized by the (x, y)-plane projection, display bottom-top (bt) and bottombottom (bb) configurations on the (x, z) plane.…”

Section: Introductionmentioning

confidence: 99%

Diverse magnetic quantization in bilayer silicene

Shih

Gumbs

et al. 2018

Phys. Rev. B

View full text Add to dashboard Cite

The generalized tight-binding model is developed to investigate the rich and unique electronic properties of AB-bt (bottom-top) bilayer silicene under uniform perpendicular electric and magnetic fields. The first pair of conduction and valence bands, with an observable energy gap, displays unusual energy dispersions. Each group of conduction/valence Landau levels (LLs) is further classified into four subgroups, that is, there exist the sublattice-and spin-dominated LL subgroups. The magnetic-field-dependent LL energy spectra exhibit irregular behavior corresponding to the critical points of the band structure. Moreover, the electric field can induce many LL anti-crossings. The main features of the LLs are uncovered with many van Hove singularities in the density-of-states and non-uniform delta-function-like peaks in the magneto-absorption spectra. The feature-rich magnetic quantization directly reflects the geometric symmetries, intra-layer and inter-layer atomic interactions, spin-orbital couplings, and the field effects. The results of this work can be applied to novel designs of Si-based nano-electronics and nano-devices with enhanced mobilities.

show abstract

A first principle calculation of electronic and dielectric properties of electrically gated low-buckled mono and bilayer silicene

Cited by 55 publications

References 21 publications

Band gap engineering in silicene: A theoretical study of density functional tight-binding theory

Band gap engineering in silicene: A theoretical study of density functional tight-binding theory

Structures of quasi-freestanding ultra-thin silicon films deposited on chemically inert surfaces

Diverse magnetic quantization in bilayer silicene

Contact Info

Product

Resources

About