2012
DOI: 10.1016/j.physb.2011.12.126
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A first-principles study of the electronic structure of the sulvanite compounds

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Cited by 20 publications
(13 citation statements)
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“…From the figure, it is clear that all the three compounds are semiconductors with indirect bandgap and the calculated band gap values are 1.041, 1.667 and 1.815 eV for Cu 3 VS 4 , Cu 3 NbS 4 and Cu 3 TaS 4 , respectively. These values are in good agreement with those found by Osorio-Guillén et al [8]. The calculated values are smaller in comparison with the experimental values of 1.3 [4] and 2.7 [2] eV for Cu 3 VS 4 and Cu 3 TaS 4 , respectively.…”
Section: Electronic Propertiessupporting
confidence: 91%
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“…From the figure, it is clear that all the three compounds are semiconductors with indirect bandgap and the calculated band gap values are 1.041, 1.667 and 1.815 eV for Cu 3 VS 4 , Cu 3 NbS 4 and Cu 3 TaS 4 , respectively. These values are in good agreement with those found by Osorio-Guillén et al [8]. The calculated values are smaller in comparison with the experimental values of 1.3 [4] and 2.7 [2] eV for Cu 3 VS 4 and Cu 3 TaS 4 , respectively.…”
Section: Electronic Propertiessupporting
confidence: 91%
“…The total energy is minimized by the geometry optimization and the optimized values of structural parameters of Cu 3 TMS 4 are shown in Table 1 along with other theoretical results. The obtained lattice parameters are in good agreement with the results obtained by Osorio-Guillén et al [8]. [18], e: [5], f: [7] The elastic parameters (independent elastic constants C ij , bulk moduli B, shear moduli G, Young's moduli Y, the Poisson ratio v, Zener's anisotropy index, A and Pough ratio) of Cu 3 TMS 4 (TM =V, Nb, Ta) have been calculated using a different calculation code (CASTEP code).…”
Section: Structural and Elastic Propertiessupporting
confidence: 91%
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“…This is due to the conduction band levels consisting of Ta 5d > Nb 4d > V 3d. 25,26 Absorption edges of ZnGa x In 2¹x S 4 (x = 00.6) were gradually blue-shifted with increasing the value of x (Figure S8), because substituted Ga 3+ formed a higher conduction band than In 3+ . 23,27 In contrast, MnGaInS 4 showed an absorption edge at wavelengths longer than ZnGa 0.5 In 1.5 S 4 as well as ZnIn 2 S 4 , indicating that Mn 3d orbitals with a d 5 electron configuration formed a new, shallow valence band above a valence band consisting of S 3p.…”
Section: Abstract: Metal Sulfide Photocatalyst | Hydrogen Evolution |mentioning
confidence: 99%
“…For x < 1/4, both bonds become shorter and d ( M – X ) < d (Cu– X ). Recently, calculated electronic structures of the Cu 3 M S 4 ( M = V, Nb, Ta) have shown that these compounds are semiconductors with an indirect bandgap 2…”
Section: Introductionmentioning
confidence: 99%