A flexible memory with low-voltage and high-operation speed using an Al₂O₃/poly(α-methylstyrene) gate stack on a muscovite substrate

Abstract

A clear technical demonstration of the critical role of the blocking layers, which has never been addressed sufficiently in previous work.

Photoerasable Organic Field-Effect Transistor Memory Based on a One-Step Solution-Processed Hybrid Floating Gate Layer

“…The time dependence of the on/off I DS current states of 5% PCBM memory was tested after the programming/erasing operations: −60 V for 1 s and light exposure for 5 s (532 nm and intensity of 3 mW cm –2 ). Figure c shows the slightly attenuated current states at V GS = −20 V and V DS = −10 V and time of more than 10 000 s, suggesting that the trapped hole charges can be retained in the charge-storage layers for a long time. , For the R-10 memory device, the current states after programming operations with different gate voltages were tested. To distinguish each current state, a read gate voltage of −30 V was required (Figure S4).…”

“…Figure 5c shows the slightly attenuated current states at V GS = −20 V and V DS = −10 V and time of more than 10 000 s, suggesting that the trapped hole charges can be retained in the charge-storage layers for a long time. 27,38 For the R-10 memory device, the current states after programming operations with different gate voltages were tested. To distinguish each current state, a read gate voltage of −30 V was required (Figure S4).…”

“…) ,− and inorganic or organic materials (carbon dots, C 60 , TIPS-pentacene, etc. ), ,,, need to be prepared through complex solution methods or high-vacuum preparation methods, where the latter has the problems of expensive cost and complicated operation processes. Then, the tunneling layers are prepared on the floating gate layer by spin-coating organic polymers (polystyrene (PS), poly­(methyl methacrylate) (PMMA), poly­(vinyl pyrrolidone) (PVP), and poly­(vinyl alcohol) (PVA)) or depositing inorganic oxides (Al 2 O 3 ), ,,,− which runs the risk of damaging the floating gate layer prepared previously.…”

Flexible and Rewritable Non‐Volatile Photomemory Based on Inorganic Lanthanide‐Doped Photochromic Thin Films

“…[ 4 ] Flexible memories can be fabricated with intrinsically stretchable organic materials. [ 5 ] Many organic photochromic molecules including spiropyrans and diarylethenes have been considered for optical memory applications. [ 6 ] However, few of them meet the stringent thermo‐ and photostable requirements.…”

Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High‐k Laminates

“…[17] Charge storage dielectrics have attracted considerable attention in synaptic transistors, due to the rich material sources, simple procedure, and wide process window. [18] However, the accumulated charges (holes/electrons) tend to be dissipated quickly after low-voltage operations, and reach a saturation state with improved voltages, which lead to the nonlinear behavior of the conductance switching. [11,19] The demanded nonvolatile and reliable multi-level date storage Synaptic transistors have shown great potential in neuromorphic computing, but remain challenging to simulate linear weight updates through conductance switching under low voltage spiking operation.…”