A flip-chip packaged coplanar 94 GHz amplifier module with efficient suppression of parasitic substrate effects

Abstract

A flip-chip mounted W-band amplifier module with more than 15 dB gain between 82 and 105 GHz has been developed, based on a 0.15 µm GaAs PHEMT technology. To predict the influence of the flip-chip transition, an equivalent circuit model of the flip-chip interconnects was developed. Lossy silicon (n-Si) flip-chip carriers were used to successfully minimize parasitic substrate modes and feed back effects. The flip-chip assembled coplanar 94 GHz amplifier MMIC was packaged in a WR-10 waveguide mount, using CPW-to-waveguide transitions realized an quartz substrates

Waveguide Integrated High-Gain Amplifier Module for Millimeter-Wave Applications

“…Active IC chips are assembled on a metal or dielectric substrate carrier by using wire-bonding or flip-chip [6] interconnection and they are finally encapsulated in the plastic package or metal housing. Several materials and structures such as dielectric substrate, IC, cavity for IC mounting, waveguide (WG) are used and are integrated into the compact-volume package.…”

“…Several materials and structures such as dielectric substrate, IC, cavity for IC mounting, waveguide (WG) are used and are integrated into the compact-volume package. Therefore, they can lead troubles such as unwanted substrate modes [6], cavity resonance [7], feedback, or crosstalk due to discontinuities [8,9]. In the previous publications [6][7][8][9], these phenomena were well analyzed and valid models on mechanism were presented.…”

“…Therefore, they can lead troubles such as unwanted substrate modes [6], cavity resonance [7], feedback, or crosstalk due to discontinuities [8,9]. In the previous publications [6][7][8][9], these phenomena were well analyzed and valid models on mechanism were presented. In order to avoid them, resistivity value of the flip-chip carrier [6], resonance condition of the cavity [7], chip mounting configurations [8], and resistive coating on the lid [10] had been investigated.…”

“…In the previous publications [6][7][8][9], these phenomena were well analyzed and valid models on mechanism were presented. In order to avoid them, resistivity value of the flip-chip carrier [6], resonance condition of the cavity [7], chip mounting configurations [8], and resistive coating on the lid [10] had been investigated. Various modules [1,2,6,11] have been successfully implemented by reflecting these investigations.…”

“…In order to avoid them, resistivity value of the flip-chip carrier [6], resonance condition of the cavity [7], chip mounting configurations [8], and resistive coating on the lid [10] had been investigated. Various modules [1,2,6,11] have been successfully implemented by reflecting these investigations. However, for the case of the highgain amplifier block requiring higher than 30 dB, signals reflected from structural discontinuities can cause stability problem due to the feedback effects [8,9].…”