2006
DOI: 10.1016/j.electacta.2006.05.054
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A flow model of porous anodic film growth on aluminium

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Cited by 368 publications
(375 citation statements)
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“…Volume expansion of the oxide and fluoride may result in the plastic flow, which pushes the fluoride-rich layer upwards. Such a model was suggested by Garcia-Vergara et al [28]. It is the beginning of the tube formation.…”
Section: The Transfer Of Timentioning
confidence: 99%
“…Volume expansion of the oxide and fluoride may result in the plastic flow, which pushes the fluoride-rich layer upwards. Such a model was suggested by Garcia-Vergara et al [28]. It is the beginning of the tube formation.…”
Section: The Transfer Of Timentioning
confidence: 99%
“…The formation of the oxide mound is due to a high value of the Pilling-Bedworth ratio, R pb , during re-anodizing, defined as the ratio of the volumes of oxide formed and the metal substrate consumed in oxidation. The R pb depends on the anodizing conditions, showing R pb = 1.2 -1.65 in the formation of porous anodic oxide film by anodizing in acid solution [34]. This is the case in the present investigation, and the formation of the oxide mound can be explained as the result of an expansion of the specimen volume.…”
Section: Growth Of Porous Type Oxide Films After Laser Irradiationmentioning
confidence: 49%
“…The present study also reveals that chemical during anodizing of aluminium in aqueous acid electrolytes, i.e., 25 V in sulphuric acid [21], 40 V in oxalic acid [22] and 195 V in phosphoric acid [23]. In the present organic electrolytes, an optimized formation voltage appears to be present for the growth the ordered porous films, which should be between 30 and 50 V. The mechanism of self-ordering of pores in porous anodic films on metals is not yet understood and is the subject of further studies, although some models, including a stress-induced flow of film materials from a pore base to a pore wall, have recently been proposed [18,[24][25][26].…”
Section: Discussionmentioning
confidence: 99%
“…However, the enrichment was only obvious at lower H 2 O concentrations, at which the formation voltage increased to higher than 100 V [8]. The H 2 O concentration-dependent enrichment of fluoride may be related to the mechanism of porous film growth, i.e., either field-assisted dissolution [17] or field-assisted flow [18,19]. The precise understanding of the growth mechanism is the subject of further study.…”
Section: Methodsmentioning
confidence: 99%