A Force‐Engineered Lint Roller for Superclean Graphene

Sun, Luzhao; Lin, Li; Wang, Zihao; Rui, Dingran; Yu, Zhonghua; Zhang, Jincan; Li, Yanglizhi; Liu, Xiaoting; Jia, Kaicheng; Wang, Kexin; Zheng, Liming; Deng, Bing; Ma, Tianbao; Kang, Ning; Xu, Hongqi; Novoselov, Konstantin; Peng, Hailin; Liu, Zhongfan

doi:10.1002/adma.201902978

Cited by 46 publications

(47 citation statements)

References 39 publications

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“…5a ). Notably, it is difficult to pick CVD-grown tBLG directly up from the Cu substrate 39 , 40 , because of the relatively weak interlayer interactions. Thus, the as-grown tBLGs were first transferred onto a SiO 2 /Si substrate with the assistance of poly(methyl methacrylate) (PMMA).…”

Section: Resultsmentioning

confidence: 99%

Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles

et al. 2021

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Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm2 V−1 s−1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.

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Section: Resultsmentioning

confidence: 99%

Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles

et al. 2021

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“…Graphene was grown on Cu foil using a low‐pressure CVD system, as reported previously. [ 31,32 ] The as‐prepared single‐crystal Cu foils were placed in a tube furnace and heated to 1020 °C under a 500 sccm flow of Ar. The samples were then annealed for 30 min under a 500 sccm flow of H 2 .…”

Section: Methodsmentioning

confidence: 99%

Large Single‐Crystal Cu Foils with High‐Index Facets by Strain‐Engineered Anomalous Grain Growth

Sun

Chang

et al. 2020

Advanced Materials

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The rich and complex arrangements of metal atoms in high‐index metal facets afford appealing physical and chemical properties, which attracts extensive research interest in material science for the applications in catalysis and surface chemistry. However, it is still a challenge to prepare large‐area high‐index single crystals in a controllable and cost‐efficient manner. Herein, entire commercially available decimeter‐sized polycrystalline Cu foils are successfully transformed into single crystals with a series of high‐index facets, relying on a strain‐engineered anomalous grain growth technique. The introduction of a moderate thermal‐contact stress upon the Cu foil during the annealing leads to the formation of high‐index grains dominated by the thermal strain of the Cu foils, rather than the (111) surface driven by the surface energy. Besides, the designed static gradient of the temperature enables the as‐formed high‐index grain seed to expand throughout the entire Cu foil. The as‐received high‐index Cu foils can serve as the templates for producing high‐index single‐crystal Cu‐based alloys. This work provides an appealing material basis for the epitaxial growth of 2D materials, and the applications that require the unique surface structures of high‐index metal foils and their alloys.

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“…[ 6–8 ] Therefore, graphene becomes a rising star on the horizon of materials science. Since the first report of centimeter‐scale single‐crystal graphene by Ruoff group showed high electrical quality, [ 9 ] great achievements have been made in the fabrication of high‐quality graphene for the application in electronic devices, including single‐crystalline graphene flakes, [ 10,11 ] super‐ordered graphene structures, [ 12,13 ] super‐clean graphene films, [ 14–16 ] and ultra‐flat graphene films. [ 17 ] However, the zero‐bandgap feature for monolayer graphene has limited its potential applications in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

Cai

2021

Advanced Materials

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Therefore, graphene becomes a rising star on the horizon of materials science. Since the first report of centimeter-scale single-crystal graphene by Ruoff group showed high electrical quality, [9] great achievements have been made in the fabrication of high-quality graphene for the application in electronic devices, including single-crystalline graphene flakes, [10,11] super-ordered graphene structures, [12,13] super-clean graphene films, [14-16] and ultra-flat graphene films. [17] However, the zero-bandgap feature for monolayer graphene has limited its potential applications in semiconductors. In addition, the negligible mass, low yield, and high production costs of graphene are insurmountable bottlenecks for the practical application in energy conversion and storage. In particular, the absence of killer applications leads to the increased difficulty in graphene commercialization. [18,19] Nevertheless, it is undeniable that the unique structure of graphene has sparked intense interest in condensed matter physics, such as fractional quantum Hall effects, [17] proton permeation, [20] and plasmons. [21] More interestingly, twisted bilayer graphene (tBLG), which is similar to the van der Waals heterostructures, has a dramatic effect on the electronic properties. [22,23] The relative rotating graphene layers become a powerful model to study topological physical properties, including ferromagnetism, [24] Mott insulating behavior and superconducting behaviors, [25,26] topological valley transport, [27] van Hove singularities, [28] and tunable bandgap. [29] Consequently, the twisted structure of tBLG has triggered tremendous enthusiasm, even inspiring the formation of a new field for twisted 2D materials. Currently, production methods of tBLG contain chemical vapor deposition (CVD) on metal catalysts; [30] epitaxial growth on SiC substrate; [31] folding monolayer graphene, [32] and stacking monolayer graphene. [33] These methods are divided into two categories: direct growth and manual assembly. Generally, the direct growth of tBLG undergoes an in situ rearrangement of carbon atoms in the non-equilibrium state at high temperatures, whereas the ex situ vertical overlap of monolayer graphene by transfer process is the basic principle for manual assembly. The completely different preparation processes give rise to the distinctive advantages and disadvantages, but precise control over twist angle and super-clean interface are the ultimate pursuits for any preparation method. Recent progress in Twisted bilayer graphene (tBLG) exhibits a host of innovative physical phenomena owing to the formation of moiré superlattice. Especially, the discovery of superconducting behavior has generated new interest in graphene. The growing studies of tBLG mainly focus on its physical properties, while the fabrication of high-quality tBLG is a prerequisite for achieving the desired properties due to the great dependence on the twist angle and the interfacial contact. Here, the cutting-edge preparation strategies and challenges of tBLG fabrica...

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A Force‐Engineered Lint Roller for Superclean Graphene

Cited by 46 publications

References 39 publications

Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles

Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles

Large Single‐Crystal Cu Foils with High‐Index Facets by Strain‐Engineered Anomalous Grain Growth

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

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