A forming-free ReRAM cell with low operating voltage

Yang, Binbin; Xu, Nuo; Li, Cheng; Huang, Chenglong; Ma, Desheng; Arumí, D.; Fang, Liang

doi:10.1587/elex.17.20200343

Cited by 11 publications

(7 citation statements)

References 26 publications

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“…There are many metal-oxide film-fabrication methods: atomic layer deposition (ALD) [ 58 , 59 ], the sol-gel method [ 60 ], magnetron sputtering [ 61 , 62 ], and pulsed laser deposition (PLD) [ 63 ]. Forming-free nanocrystalline ZnO films grown using PLD have been shown to exhibit improved resistive switching characteristics, with higher R HRS / R LRS ratios and lower operating voltages [ 64 , 65 , 66 , 67 ]. PLD is a relatively inexpensive technology for growing thin films that meets the requirements for fabricating memristive devices, primarily because of the possibility of precise adjustment of the electrophysical parameters of the oxide by varying the growth parameters.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

et al. 2022

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This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values RHRS and RLRS and the highest value of Uset = 2.7 ± 0.4 V. The samples with the ZnO:In and ZnO:Pd bottom electrode showed the lowest Uset and Ures values. An increase in the number of laser pulses from 1000 to 5000 was shown to lead to an increase in the thickness of the nanocrystalline ZnO film from 7.2 ± 2.5 nm to 53.6 ± 18.3 nm. The dependence of electrophysical parameters (electron concentration, electron mobility, and resistivity) on the thickness of the forming-free nanocrystalline ZnO film for the TiN/ZnO/W structure was investigated. The endurance test and homogeneity test for TiN/ZnO/W structures were performed. The structure Al2O3/TiN/ZnO/W with a nanocrystalline ZnO thickness 41.2 ± 9.7 nm was shown to be preferable for the manufacture of ReRAM and memristive neuromorphic systems due to the highest value of RHRS/RLRS = 2307.8 ± 166.4 and low values of Uset = 1.9 ± 0.2 V and Ures = −1.3 ± 0.5 V. It was demonstrated that the use of the TiN top electrode in the Al2O3/TiN/ZnO memristor structure allowed for the reduction in Uset and Ures and the increase in the RHRS/RLRS ratio. The results obtained can be used in the manufacturing of resistive-switching nanoscale devices for neuromorphic computing based on the forming-free nanocrystalline ZnO oxide films.

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Section: Introductionmentioning

confidence: 99%

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

et al. 2022

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“…First, the fabricated devices with the Au TE did not show any memory properties, but rather showed conventional insulator properties. Conversely, the Y 2 O 3 RRAM devices with the Ag or Cu TE exhibited conventional bipolar memory properties, and the initial forming process was not needed [ 33 , 34 ]. The RRAM is classified into oxygen vacancy-based OxRRAM or metal ion-based CBRAM, according to the driving mechanism.…”

Section: Resultsmentioning

confidence: 99%

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Cho,

Lee,

Heo

et al. 2024

Nanomaterials

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Herein, sol–gel-processed Y2O3 resistive random-access memory (RRAM) devices were fabricated. The top electrodes (TEs), such as Ag or Cu, affect the electrical characteristics of the Y2O3 RRAM devices. The oxidation process, mobile ion migration speed, and reduction process all impact the conductive filament formation of the indium–tin–oxide (ITO)/Y2O3/Ag and ITO/Y2O3/Cu RRAM devices. Between Ag and Cu, Cu can easily be oxidized due to its standard redox potential values. However, the conductive filament is easily formed using Ag TEs. After triggering the oxidation process, the formed Ag mobile metal ions can migrate faster inside Y2O3 active channel materials when compared to the formed Cu mobile metal ions. The fast migration inside the Y2O3 active channel materials successfully reduces the SET voltage and improves the number of programming–erasing cycles, i.e., endurance, which is one of the nonvolatile memory parameters. These results elucidate the importance of the electrochemical properties of TEs, providing a deeper understanding of how these factors influence the resistive switching characteristics of metal oxide-based atomic switches and conductive-metal-bridge-filament-based cells.

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“…Conversely, the fabricated RRAM devices with 0.20 and 0.60 M precursor concentrations showed conventional bipolar characteristics and did not require an initial forming process. It is well known that RRAM devices consisting of oxygen vacancy-rich oxides and Ag or Cu electrodes do not require the initial forming process [31,32]. The driving system of an RRAM with a metal-insulator-metal structure can be divided into HRS (logic value 0) and LRS (logic value 1) according to the change in resistance, and an initial value before applying an external voltage starts with the HRS.…”

Section: Resultsmentioning

confidence: 99%

Thickness dependence of resistive switching characteristics of the sol–gel processed Y₂O₃ RRAM devices

Kim

Kim²,

Lee³

et al. 2023

Semicond. Sci. Technol.

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In this study, yttrium oxide (Y2O3)-based resistive random-access memory (RRAM) devices were fabricated using the sol-gel method. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require a forming process. The Y2O3 film thickness was controlled by varying the liquid-phase precursor concentration. As the concentration increased, thicker Y2O3 films were formed. In addition, the concentration of oxygen vacancies increased. The RRAM device properties were not observed for thin Y2O3 films, which had the lowest oxygen vacancy concentration. Moreover, RRAM devices, which consisted of the thickest Y2O3 films with the largest oxygen vacancy concentration, showed poor non-volatile properties. The optimized Y2O3-based RRAM devices with a thickness of 37 nm showed conventional bipolar RRAM device characteristics, which did not require an initial forming process. The fabricated RRAM devices showed a high resistance state to low resistance state ratio of over 104, less than +1.5 V of SET voltage, and –15. V of RESET voltage. The RRAM devices also showed promising non-volatile memory properties, without significant degradation after 10^3 s retention and 10^2 cycle endurance tests.

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A forming-free ReRAM cell with low operating voltage

Cited by 11 publications

References 26 publications

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Thickness dependence of resistive switching characteristics of the sol–gel processed Y₂O₃ RRAM devices

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A forming-free ReRAM cell with low operating voltage

Cited by 11 publications

References 26 publications

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Thickness dependence of resistive switching characteristics of the sol–gel processed Y2O3 RRAM devices

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Thickness dependence of resistive switching characteristics of the sol–gel processed Y₂O₃ RRAM devices