A fourth generation analog incircuit program generator

Crook, Doug

doi:10.1109/test.1990.114074

Cited by 3 publications

(1 citation statement)

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“…This procedure is an important prerequisite for realizing the concept of built-in reliability aiming at a higher yield in fabrication and higher reliability of the devices in operation. 19 Several methods have been used for the analysis of the carrier lifetime and the sheet resistance and for the identification of the contaminating atoms, because each method has its specific advantages for the individual applications.…”

Section: Discussionmentioning

confidence: 99%

Analytical Tools for the Characterization of Power Devices

Schulze¹,

Frohnmeyer²,

Niedernostheide³

et al. 2000

J. Electrochem. Soc.

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Since power devices require an electrically active, thick n‐type silicon layer with high resistivity and a large area, their electrical characteristics are extremely sensitive to contamination. If transition metals diffuse into the wafers during the high temperature steps required for device fabrication, an uncontrolled increase in leakage current and on state voltage can be observed. Furthermore, current filamentation and instabilities of the electrical data can occur. As a consequence of the low doping level of the n‐base, the blocking voltage and the failure rate due to cosmic radiation are sensitive to contaminating atoms acting as donors or acceptors. To obtain information about the sources and the extent of the contamination, a contamination check was performed after each high temperature step. Moreover, the dependence of the carrier lifetime on temperature and injection level was analyzed for typical operation conditions of power devices. The results proved to be important in finding ways of keeping contamination and silicon defect densities as low as possible and to ensure that good electrical data with adequate stability could be obtained. © 2000 The Electrochemical Society. All rights reserved.

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Section: Discussionmentioning

confidence: 99%

Analytical Tools for the Characterization of Power Devices

Schulze¹,

Frohnmeyer²,

Niedernostheide³

et al. 2000

J. Electrochem. Soc.

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Fast and high quality in-circuit test development through expert debug

Loopik

Crook²,

Browen³

et al.

Proceedings ETC 93 Third European Test Conference

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Analog in-circuit program generator (APG) technology has improved to a state where the quality of tests written by APGs can hardly be met by tests written by humans [Crook 901. One of the best examples of high-quality APGs can be found in Hewlett-Packard's HP 3070 board tester.The primary reason why automatically generated tests are non-optimal is that the input to the APG, the data that describes the board under test, contains inaccuracies. It requires a long debug process to catch these inaccuracies. We propose a new debug methodology for tests, in which the root cause for tests that fail during debug is diagnosed and repaired.In order to aid the test developer and to cut debug time we have developed a debug environment that supports this methodology. An expert system, named ROSALIND, analyses the results of a debug testplan and is able to take additional measurements on the testhead in order to diagnose failing tests.A research prototype has been implemented and tested. It cuts diagnosis time, facilitates higher test qualities and makes the implementation of revision changes to the board under test much easier.

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Structure and metrology for an analog testability bus

Parker

McDermid

Oresjo

Proceedings of IEEE International Test Conference - (ITC)

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A fourth generation analog incircuit program generator

Cited by 3 publications

References 0 publications

Analytical Tools for the Characterization of Power Devices

Analytical Tools for the Characterization of Power Devices

Fast and high quality in-circuit test development through expert debug

Structure and metrology for an analog testability bus

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