A fully differential wideband analog front end for FMCW LiDAR application

Zheng, Xiaoxiao; Ye, Mao; Wang, Qiuwei; Li, Yao; Zhao, Yiqiang

doi:10.1016/j.mejo.2023.105948

Microelectronics Journal

2023

DOI: 10.1016/j.mejo.2023.105948

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A fully differential wideband analog front end for FMCW LiDAR application

Xiaoxiao Zheng,

Mao Ye,

Qiuwei Wang

et al.

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2024

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Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation

Chen,

et al. 2024

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Up-converted photoluminescence excitation (UPLE) spectra of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates have been investigated. Based on the temperature dependence of UPLE, the 3.335-eV excitation peak is attributed to the two-dimensional electron gases (2DEGs) in the AlGaN/GaN heterostructure. A two-step two-photon absorption process through real intermediate quantum-well states is suggested to be responsible for the up-converted luminescence in the AlGaN/GaN HEMTs

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Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation

Chen,

et al. 2024

Opt. Express

View full text Add to dashboard Cite

show abstract

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A fully differential wideband analog front end for FMCW LiDAR application

Cited by 1 publication

References 22 publications

Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation

Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation

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