In the paper, a column-level readout circuit is designed for digital X-ray detectors using the 180nm CMOS process. The circuit consisted of the single-channel analog front end (AFE) readout circuit and the hybird analog-to-digital conversion circuit. A high gain charge amplifier is adopted as AFE to decrease the effect of the input parasitic capacitance, while improving the linearity. The amplifier employs the relevant double sampling technology to inhibit noise and resolve the imbalance of TIA. In order to achieving 12 bits resolution, low power and high linearity, the single-slope architecture as low 6-bit and the successive approximation architecture as high 6-bit is designed to the hybird ADC. The single-channel layout area of the column-level readout circuit is 290×430μm 2 . Layout simulation shows that the circuit can integrate and amplify the charge of 0 to 1.2 pC, with output linearity up to 99.9%, SNDR of 68.23 dB and ENOB of 11.04 bits.