A function-fit model for the hard breakdown I–V characteristics of ultra-thin oxides in MOS structures

Miranda, Estibaliz Ortega; BRANDALA, B

doi:10.1016/s0026-2714(04)00359-2

Microelectronics Reliability

2005

DOI: 10.1016/s0026-2714(04)00359-2

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A function-fit model for the hard breakdown I–V characteristics of ultra-thin oxides in MOS structures

Estibaliz Ortega Miranda

B BRANDALA

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A function-fit model for the hard breakdown I–V characteristics of ultra-thin oxides in MOS structures

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