A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems

This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 m enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P 1 dB ) of higher than 27 dBm. Index Terms-Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT), high efficiency, power amplifier (PA), reactance compensation.

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Investigation of current crowding effect on spiral inductors

Tsai¹,

Lin²,

Frye³

et al.

1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest

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High-Q inductors are the important elements for RF circuit design, especially in the cellular and PCS bands, where they are difficult to be realized. In this paper, we will discuss and explain the current crowding effect, which degrades the Q of the spiral inductor, as the number of turns increases. Both the method of moment (MOM) and the finite-difference timedomain (FDTD) technique will be applied to this analysis. inductor line around line polyimide oxide HR Si Figure 1 : The cross-section view of the M C M spiral inductor.

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A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems

Cited by 6 publications

References 4 publications

Accurate design of inductors on multi-chip module using high-resistivity silicon substrate

Accurate design of inductors on multi-chip module using high-resistivity silicon substrate

A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Investigation of current crowding effect on spiral inductors

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