A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs

Lyu, Gang; Wei, Jin; Song, Wenlei; Zheng, Zheyang; Zhang, Li; Zhang, Jie; Cheng, Yan; Feng, Sirui; Ng, Yat Hon; Chen, Tao; Zhong, Kailun; Liu, Jiapeng; Zeng, Rong; Chen, Kevin J.

doi:10.1109/iedm19574.2021.9720505

Cited by 13 publications

(1 citation statement)

References 8 publications

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“…[1][2][3][4][5] Benefiting from the superior physical properties of GaN and large scale, low cost, mature manufacturing process of Si substrates, GaN-on-Si devices have become one of the greatly competitive candidates for the next-generation power electronics. [6][7][8] At present, GaN-on-Si power devices have been commercialized in the applications under 650 V such as fast chargers of mobile phones based on the nitrides based high electron mobility transistor (HEMT) structure. [9] However, for the application scenarios under higher voltage (up to kV) like inverters in electric automobiles, which occupies a much larger market, the inherent drawbacks like dynamic performance degradation greatly raise serious concern about the reliability and usability of these lateral GaN devices.…”

Section: Introductionmentioning

confidence: 99%

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Chen

Zhang

Liu

et al. 2023

Adv Elect Materials

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Vertical GaN-on-Si devices are promising for the next-generation high-voltage power electronics with low cost and high efficiency. However, their applications are impeded by the limited thickness of crack-free GaN layers and high threading dislocation density (TDD) in the layer. Buffer layers are crucial for stress control while they usually behave with poor surface morphology, which causes early stress relaxation in GaN and limited thickness. Hereby, a terrace engineering approach for the buffer layers is proposed. Through tuning the supersaturation ratio, the terrace width can be manipulated and an atomically smooth AlGaN buffer layer can be realized, which effectively reduces the compressive stress relaxation and provides a firm foundation for thick GaN growth. As a result, a 7.5 μm thick GaN drift layer with TDD as low as 8.6 × 10 7 cm −2 is achieved on Si substrates. The room temperature electron mobility of the GaN drift layer can be raised up to 1210 cm 2 V −1 s −1 . The fabricated PiN diode shows a high breakdown voltage of 1058 V as well as a high on/off ratio of 10 12 . This work thus truly demonstrates the potential of high-performance and low-cost GaN-based electronic as well as optoelectronic devices on Si platforms.

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Section: Introductionmentioning

confidence: 99%

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Chen

Zhang

Liu

et al. 2023

Adv Elect Materials

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GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

Moench

Basler

Reiner

et al. 2023

e-Prime - Advances in Electrical Engineering, Electronics and E

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High-temperature ultraviolet photodetector and amplifying integrated circuits based on AlGaN/GaN heterostructure

Tang,

Liu,

Zhao

et al. 2024

J. Phys. D: Appl. Phys.

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In this work, an ultraviolet (UV) photodetection and amplifying integrated circuit (IC) based on an AlGaN/GaN heterostructure is demonstrated. The IC consists of a metal-heterostructure-metal photodetector (MHM-PD) and a high-electron-mobility transistor (HEMT)-based amplifier. The photoresponse of the MHM-PD increases at elevated temperatures due to the spatial separation of the photocarriers under the polarization electric field at the AlGaN/GaN heterointerface, as well as the photo-enhanced leakage current through the metal-heterostructure junction. At 250 ℃, MHM-PD achieves a peak photoresponsivity of 14.5 A/W and a UV-to-visible rejection ratio of 104. As the thermal chuck temperature increases from 25 ℃ to 250 ℃, the performance of the HEMT-based amplifier shows good thermal stability. Finally, the IC achieves a photoresponse of over 106 V/W and a switching frequency of 50 kilohertz at 250 ℃ with rise and decay time constants of 3.95 μs and 2.8 μs, respectively. These results show that the IC has a high-sensitivity and high-speed UV detection capability.

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A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs

Cited by 13 publications

References 8 publications

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

High-temperature ultraviolet photodetector and amplifying integrated circuits based on AlGaN/GaN heterostructure

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