A gas sensor comprising two back-to-back connected Au/TiO<sub>2</sub>Schottky diodes

Dehghani, Niloofar; Yousefiazari, Ehsan

doi:10.1088/2053-1591/aabbd3

Cited by 15 publications

(5 citation statements)

References 37 publications

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“…Transition metals (TMs) have attracted great attention for their broad range of applications in surface science, heterogeneous catalysis, electronic devices, gas sensors, and so forth. To increase atom utilization and save the cost, in particular for precious group metals, TMs are often prepared in small sizes .…”

Section: Introductionmentioning

confidence: 99%

First-Principles Kinetic Study for Ostwald Ripening of Late Transition Metals on TiO₂(110)

Wan

Dai

et al. 2018

J. Phys. Chem. C

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Supported transition metal (TM) particles on oxides severely deactivate because of sintering. Investigation of the dependence of Ostwald ripening kinetics on the composition and size of the metal particles is essential for understanding the sintering mechanism. On the basis of the first-principles kinetics simulation, we study here the ripening kinetics of TiO 2 (110)-supported late TMs (including Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au) in a wide range of particle size. Density functional theory calculations show that the total activation energies of ripening are decided by the corresponding formation energy of the metal monomer on TiO 2 (110) and vary in the range of 3 eV following the order of Ag < Cu < Pd < Au < Ni < Rh < Pt < Ru < Ir. Isothermal and temperature ramping kinetic simulations are performed, and the corresponding half-life time and onset temperature of ripening are extracted, respectively. The results show that the half-life time of ripening exponentially increases with the total activation energy of the metal from Ag to Ir. The onset temperature of ripening increases more than hundreds of kelvin, which is consistent with variation in the melting points of the bulk counterpart. The ripening rate is found to dramatically increase with the decrease of the particle size, and the corresponding size effect increases pronouncedly with the total activation energy from Ag to Ir. This work provides valuable insights into the ripening kinetics of oxide-supported metal particles and is helpful in designing stable nanocatalysts.

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Section: Introductionmentioning

confidence: 99%

First-Principles Kinetic Study for Ostwald Ripening of Late Transition Metals on TiO₂(110)

Wan

Dai

et al. 2018

J. Phys. Chem. C

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“…Even though several materials and structures have been studied for semiconductor-type gas sensors, there have not been any innovative improvements. Thus, researchers have been recently paying attention to the application of semiconductor-type gas sensors using a new concept for memristor devices. − Due to the characteristics of the memristor, such as resistive switching and memory function, the memristor-based gas sensors are called gasistors, which is a gas sensor plus a memory resistor, and they show gas sensing and memory characteristics. ,− In a previous study, to overcome the shortcomings of the measurement methods for a gas cumulative flow, especially in the long-term continuous measurement, a gasistor is proposed, and it is successfully demonstrated using a TiO 2 memristor. Especially, when comparing it with the velocity types and the differential pressure types in flow sensors, the gasistor avoids the conversion process from the instantaneous flow to the cumulative flow, which improves the accuracy of the measurement results.…”

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confidence: 99%

Advanced Recovery and High-Sensitive Properties of Memristor-Based Gas Sensor Devices Operated at Room Temperature

et al. 2021

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Fast recovery, high sensitivity, high selectivity, and room temperature (RT) sensing characteristics of NO gas sensors are essential for environmental monitoring, artificial intelligence, and inflammatory diagnosis of asthma patients. However, the conventional semiconductor-type gas sensors have poor sensing characteristics that need to be solved, such as slow recovery speeds (>360 s), low sensitivity (3.8), and high operating temperatures (>300 °C). We propose here a memristor-based NO gas sensor as a gasistor (gas sensor + memory resistor) with SnO 2 , Ta 2 O 5 , and HfO 2 films, which successfully demonstrated the feasibility of fast reaction/recovery (<1 s/90 ns) and high sensitivities such as 11.66 and 5.22 in Ta 2 O 5 and HfO 2 gasistors for NO gas, at RT. Furthermore, so as to reinforce the selectivity in multigas ambient, we suggest a parallel circuit using three kinds of gasistors having different sensitivities for NO, O 2 , and C 2 H 6 gases, which results in an improvement of selectivity for the selected gas at RT.

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“…In extreme conditions such as high temperature and harsh environment, gas sensors encounter difficulties in detecting gas concentration, which requires outstanding physical and chemical properties of sensing materials. Dehghani et al 114 reported a robust sensor with two back-to-back connected Au/ TiO 2 Schottky diodes that can operate at 600 °C. The sensor current increased 15 times when exposed to 1000 ppm ethanol vapor in air.…”

Section: Perspectivementioning

confidence: 99%

The enhanced sensing properties of MOS-based resistive gas sensors by Au functionalization: a review

Luan,

Hu,

et al. 2023

Dalton Trans.

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A gas sensor comprising two back-to-back connected Au/TiO₂Schottky diodes

Cited by 15 publications

References 37 publications

First-Principles Kinetic Study for Ostwald Ripening of Late Transition Metals on TiO₂(110)

First-Principles Kinetic Study for Ostwald Ripening of Late Transition Metals on TiO₂(110)

Advanced Recovery and High-Sensitive Properties of Memristor-Based Gas Sensor Devices Operated at Room Temperature

The enhanced sensing properties of MOS-based resistive gas sensors by Au functionalization: a review

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A gas sensor comprising two back-to-back connected Au/TiO2Schottky diodes

Cited by 15 publications

References 37 publications

First-Principles Kinetic Study for Ostwald Ripening of Late Transition Metals on TiO2(110)

First-Principles Kinetic Study for Ostwald Ripening of Late Transition Metals on TiO2(110)

Advanced Recovery and High-Sensitive Properties of Memristor-Based Gas Sensor Devices Operated at Room Temperature

The enhanced sensing properties of MOS-based resistive gas sensors by Au functionalization: a review

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Product

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A gas sensor comprising two back-to-back connected Au/TiO₂Schottky diodes

First-Principles Kinetic Study for Ostwald Ripening of Late Transition Metals on TiO₂(110)

First-Principles Kinetic Study for Ostwald Ripening of Late Transition Metals on TiO₂(110)