A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors

Abstract

We have devised a vertical self-powered GaSe/Si based 2D/3D p–n heterojunction device for a high-performance photodetection application.

A nanoflower-like GaSe/β-Ga2O3 based heterostructure for highly efficient self-powered broadband photodetectors

“…7 come in contact, the difference in Fermi levels triggers the diffusion of electrons and holes from the opposite direction. 37,43,[56][57][58][59][60] As shown in Fig. 8(a), the energy band will bend as GaSe and b-Ga 2 O 3 progressively merge to form a type II alignment, and the built-in potential and depletion region at the interface will be established.…”

Growth Mode Transition in Two-Dimensional GaSe on Three-Dimensional GaN/Sapphire Platform: Implication for Self-Powered Photodetection

“…However, due to the hundreds of nanometer thickness and the preferential lateral transport in both device models, we assume that the contribution of GaN to the total photoresponse signal is the same in the devices and may be ignorable. Overall, the excellent stability and distinct performance of different growth mode GaSe-based devices could diversify the potential application of Ga-based monochalcogenide once advanced processing and designs in device fabrication are taken into account. − …”

Polarization-Sensitive, Self-Powered, and Broadband Semimetal MoTe2/MoS2 van der Waals Heterojunction for Photodetection and Imaging

“…KPFM can obtain the surface potential difference (SPD) between the conducting tip and the sample surface directly by measuring the long-range electrostatic forces generated from the probe–sample interactions. Therefore, the SPD between tip and sample can be defined as − normalS normalP normalD M o S 2 = normalΦ t i p − normalΦ M o S 2 e = 146 .25em normalm normalV normalS normalP normalD M o T e 2 = normalΦ t i p − normalΦ M o T e 2 e = 11 .25em normalm normalV where Φ tip , Φ MoS 2 , and Φ MoTe 2 refer to the work functions of conducting tip, MoS 2 , and MoTe 2 , respectively. Thus, the SPD in the interface of the heterojunction can be calculated as following equations and the result is displayed in Figure c. normalΔ normalS normalP normalD = normalΦ M o T e 2 − normalΦ M o S 2 e = 135 .25em normalm normalV It is apparent that MoS 2 has a lower work function than MoTe 2 , that is, the Fermi level of MoS 2 is higher than MoTe 2 .…”