A Gate Breakdown Mechanism in Mesfets and HEMTs

Abstract

A model for gate breakdown in MESFETs and HEMTs is proposed. The model is based upon a combination of thermally assisted tunneling and avalanche breakdown. When thermal effects are considered it is demonstrated that the model predicts increasing drain-source breakdown as the gate electrode is biased towards pinch-off, in agreement with experimental data. The model also predicts, for the first time, the gate current versus bias behavior observed in experimental data. The model is consistent with the various reports of breakdown and light emission phenomena reported in the literature.