2005
DOI: 10.1016/j.snb.2004.11.016
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A gel-based wafer-level testing procedure for microelectrodes

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Cited by 6 publications
(3 citation statements)
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“…For these devices, impedance values were measured to be less than 20 k at 1 kHz. For both gold and platinum electrodes, our measured impedance values were smaller than those reported elsewhere, with values normalized to the electrode area [20,21,[41][42][43]. We believe this is because the electrode surface was roughened during the DRIE step in our process.…”
Section: Device Characterizationcontrasting
confidence: 65%
“…For these devices, impedance values were measured to be less than 20 k at 1 kHz. For both gold and platinum electrodes, our measured impedance values were smaller than those reported elsewhere, with values normalized to the electrode area [20,21,[41][42][43]. We believe this is because the electrode surface was roughened during the DRIE step in our process.…”
Section: Device Characterizationcontrasting
confidence: 65%
“…after dicing, bonding, encapsulation and mounting processes. This is an uneconomical approach, because the interconnection, encapsulation and packaging costs for microsystems can be very high, typically in the order of 55-85% of the total production costs [1,2]. These costs are further wasted for non-functioning chips (bad dies, see Figure 1).…”
Section: Introductionmentioning
confidence: 99%
“…Such a technique in combination with appropriate electrochemical techniques (e.g., cyclic voltammetry, electrochemical impedance spectroscopy and scanning electrochemical impedance spectroscopy) has been utilised for wafer-level quality control of microelectrodes [5]. In addition, a gel-based wafer-level testing procedure for microelectrodes has been suggested in [2]. However, due to the small gate sizes of ISFETs, special techniques are needed to reproducibly produce and control small droplets of a test sample.…”
Section: Introductionmentioning
confidence: 99%