2009
DOI: 10.1109/ted.2008.2009023
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A General and Reliable Model for Charge Pumping—Part I: Model and Basic Charge-Pumping Mechanisms

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Cited by 22 publications
(63 citation statements)
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“…The pumped region represents the spatial and energetic portion of the oxide where traps are exchanging carriers with the substrate during a single CP pulse. This quantity has been calculated using an analytical approach similar to the one adopted in [6], [15], and [22] from the maximum electron and hole occupations using…”
Section: Pumped and Probed Cp Regionsmentioning
confidence: 99%
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“…The pumped region represents the spatial and energetic portion of the oxide where traps are exchanging carriers with the substrate during a single CP pulse. This quantity has been calculated using an analytical approach similar to the one adopted in [6], [15], and [22] from the maximum electron and hole occupations using…”
Section: Pumped and Probed Cp Regionsmentioning
confidence: 99%
“…Fig. 8 illustrates the simulated f CP for three frequencies (1 kHz, 10 kHz, and 1 MHz) at T = 300 K and V sw = 2.5 V. The maximum probed regions achievable are illustrated at V low cor- [5], [15], [16], [23]. responding to the maximum CP current.…”
Section: Pumped and Probed Cp Regionsmentioning
confidence: 99%
“…V th = 10 V is extracted as the intercept of linear extrapolation of the transfer curve. According to the MOSFET CP model [1]- [3], I cp should be obtained when V g pulses span the hatched transition region between V fb and V th . For example, if I cp is measured by using V g pulses with fixed amplitude V ph = 22 V and increasing V gb (e.g., pulses I to V in Fig.…”
Section: Elliot Curves In Poly-si Tftsmentioning
confidence: 99%
“…When the entire V g pulse is within the accumulation or strong inversion region, such as pulse I (V gp = V fb ) or V (V gb = V th ), no I cp arises. Thus, an ideal Elliot curve is cap shaped, where V fb and V th are critical onset V g 's of the constant I cp [1]- [3]. The dotted line is a measured Elliot curve from the LT TFT by using optimized V g pulses with V ph = 22 V and a large enough t r /t f of 1 ms to minimize the geometric effect [10].…”
Section: Elliot Curves In Poly-si Tftsmentioning
confidence: 99%
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