A General Atmospheric Pressure Chemical Vapor Deposition Synthesis and Crystallographic Study of Transition‐Metal Sulfide One‐Dimensional Nanostructures

Ge, Jianping; Wang, Jin; Zhang, Hao-Xu; Li, Yadong

doi:10.1002/chem.200400008

Cited by 42 publications

(41 citation statements)

References 28 publications

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“…The evidence of TaS3 found at lower reaction temperatures combined with the fact that neither any metal (catalyst) particles were added nor were found at the tips or elsewhere of the nanotapes, would suggest 25 that growth occurs via a vapour-solid (VS) process involving a sulphur-rich vapour phase and the tantalum foil surface. Such VS growth mechanisms have been proposed for a number of transition metal monosulfides, 20 although in the SACVT experiments described herein, there is no evidence of 30 the tip growth often induced by nanoparticular catalysts (which can often insinuate a vapour-liquid-solid, VLS, process). The accumulated evidence thus points to VSmediated root growth of the nanotapes from the tantalum substrate surface.…”

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confidence: 70%

“…After a 10° tilt, a pronounced spot splitting is 20 observed in the direction perpendicular to the wire axis (arrowed in Figure 6c for 3R. This clearly rules out any match to the 1T or 3R phases.…”

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confidence: 80%

“…We demonstrate that high aspect ratio, superconducting disulfide nanowires are produced at intermediate reaction temperatures (650 °C); below this temperature nanowires close to a 15 composition of TaS3 are produced while at higher temperatures nanowire formation is curtailed and succeeded by formation of characteristic crystalline platelets (with the 1T structure). Importantly, a systematic study of the microand crystal structure of the superconducting nanostructures 20 reveals first that the wires are of rectangular cross-section forming nanotapes composed of bundles of much smaller fibers and second that these superconducting disulfide nanotapes are of the 2H polytype.…”

Section: Introductionmentioning

confidence: 99%

“…The patterns can be fit approximately to more than one of the possible polymorphs, but most convincingly to either the 2H or 3R structures. In fact, the best refined cell parameters were obtained when the 20 PXD reflections were indexed to the 2H structure, yielding values of a = 3.32(2) Ǻ and c = 12.159(2) Ǻ; c / a = 3.66. This represents an expansion along c of ca.…”

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confidence: 99%

“…28 At present the experimental band structure and DOS of TaS2 nanostructures are unknown. A systematic investigation of the crystal chemistry, electronic structure and transport (and magnetic) properties of individual and bundled dichalcogenide nanowires is essential if we are to 20 establish the equivalent structure-property relationships that are now emerging among the superconducting bulk chalcogenides. An understanding of growth and structure at the nanoscale is a vital first step towards this and to an ability to design chalcogenide nanowires with predictable properties.…”

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confidence: 99%

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Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry

2010

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Superconducting tantalum disulfide nanowires have been synthesised by Surface Assisted Chemical Vapour Transport (SACVT) methods and their crystal structure, morphology and stoichiometry studied by powder X-ray diffraction (PXD), scanning electron microscopy / energy 10 dispersive X-ray spectroscopy (SEM, EDX), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and nanodiffraction. The evolution of morphology, stoichiometry and structure of materials grown by SACVT methods in the Ta-S system with reaction temperature was investigated systematically. High aspect ratio, superconducting disulfide nanowires are produced at intermediate reaction temperatures (650 °C

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confidence: 70%

mentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry

2010

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Halide‐Transport Chemical Vapor Deposition of Luminescent ZnS:Mn²⁺ One‐Dimensional Nanostructures

Wang

Zhang

et al. 2005

Adv Funct Materials

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ZnS:M2+ (M = Mn, Co, or Cu) single‐crystal one‐dimensional nanostructures have been prepared via a simple halide‐transport chemical vapor deposition (HTCVD) process at a relatively low temperature. The obvious phase transition suggests that doping with Mn favors the formation of the hexagonal phase at a relative low temperature. The strong photoluminescence from blue to green and the yellow–orange emission, which was caused by the doping of various elements in ZnS nanowires and nanobelts, suggests possible applications of the one‐dimensional nanostructures in nanoscale optoelectronic devices.

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Patterned MoS₂ Nanostructures Over Centimeter‐Square Areas

et al. 2005

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This paper reports an approach for the generation of molybdenum disulfide nanostructures by the sulfidation of patterned sub-300 nm features of molybdenum metal. Our method can be used to pattern arbitrary shapes of MoS 2 nanostructures with independent control over their width, height, and length. In addition, we can control the orientation of the crystals by placing the patterned substrates at different locations in the quartz tube furnace. These nanostructures can be fabricated with variable pitch, over large areas (cm 2 ), and on a range of insulating and conducting substrates (e.g., sapphire, fused silica, and silicon). This work provides a general strategy for patterning nanoscale crystalline structures on surfaces-in particular, metal sulfide nanomaterials-by combining topdown nanoscale patterning techniques with bottom-up chemical methods.MoS 2 is a layered semiconducting material that has shown promise in chemical sensors, [1] in solar cells, [2] in catalysis, [3][4][5] and for low-friction surfaces. [6][7][8] Recent studies have suggested that reducing the size of the MoS 2 crystals can improve their lubrication properties in bearings, O-rings, or other heavy-wear applications.[9] The ability to pattern MoS 2 nanostructures and other metal-sulfide materials on surfaces with specific sizes and shapes has the potential to optimize and improve their usefulness. MoS 2 ribbons have successfully been grown on the step edges of highly oriented pyrolytic graphite by electrochemical methods. [10,11] Although the heating of MoO 2 nanowires in H 2 S for several days could achieve increased lateral dimensions of MoS 2 ribbons, control of other aspects of this system, such as the height, the spacing, and the overall length of the ribbons, remains a challenge. There are two strategies for organizing nanostructures on surfaces: i) synthesis of the nanomaterials followed by assembly into architectures, or ii) direct growth of the nanostructures at predefined locations. The former approach relies on assembly methods such as fluidic-based assembly, [12,13] electric-and magnetic-field-mediated assembly, [14][15][16] electrostatic assembly, [17,18] and template-based assembly. [19,20] Serial lithographic techniques, including scanning-probe and electronbeam (e-beam) writing, can easily pattern functional structures with sub-100 nm features; however, their slow write speeds and small write areas can be a drawback. [21][22][23] Examples of parallel patterning methods are nanosphere lithography and laser-assisted embossing, which can generate sub-100 nm patterns of simple geometries. [24,25] We and others have developed a suite of soft-lithographic nanopatterning tools that can generate small (sub-30 nm) features over relatively large areas (> 1 cm 2 ) in a parallel process. [26,27] These tools have been used to create Si and GaAs nanostructures by chemical etching [28,29] and to direct the growth of arrays of ZnO nanowires and carbon nanotubes. [30][31][32] Here we report an important variant of the directed-growth method: ...

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A General Atmospheric Pressure Chemical Vapor Deposition Synthesis and Crystallographic Study of Transition‐Metal Sulfide One‐Dimensional Nanostructures

Cited by 42 publications

References 28 publications

Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry

Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry

Halide‐Transport Chemical Vapor Deposition of Luminescent ZnS:Mn²⁺ One‐Dimensional Nanostructures

Patterned MoS₂ Nanostructures Over Centimeter‐Square Areas

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A General Atmospheric Pressure Chemical Vapor Deposition Synthesis and Crystallographic Study of Transition‐Metal Sulfide One‐Dimensional Nanostructures

Cited by 42 publications

References 28 publications

Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry

Superconducting tantalum disulfide nanotapes; growth, structure and stoichiometry

Halide‐Transport Chemical Vapor Deposition of Luminescent ZnS:Mn2+ One‐Dimensional Nanostructures

Patterned MoS2 Nanostructures Over Centimeter‐Square Areas

Contact Info

Product

Resources

About

Halide‐Transport Chemical Vapor Deposition of Luminescent ZnS:Mn²⁺ One‐Dimensional Nanostructures

Patterned MoS₂ Nanostructures Over Centimeter‐Square Areas