We propose an all-photonic, non-volatile memory and processing element based on phase-change thin-films deposited onto nanophotonic waveguides. Using photonic microring resonators partially covered with Ge 2 Sb 2 Te 5 (GST) multi-level memory operation in integrated photonic circuits can be achieved. GST provides a dramatic change in refractive index upon transition from the amorphous to crystalline state, which is exploited to reversibly control both the extinction ratio and resonance wavelength of the microcavity with an additional gating port in analogy to optical transistors. Our analysis shows excellent sensitivity to the degree of crystallization inside the GST, thus providing the basis for non-von Neuman neuromorphic computing.The ability to write, store and retrieve data is at the very heart of information processing. Various techniques are employed to efficiently cope with the vast spread of speed and long term storage needs. In particular Phase Change Memories (PCMs), promise to revolutionize the field of information processing by bridging the gap between the short-term, but very quick operation of on-chip memories and the long-term, but relatively slow storage systems such as solid-state devices and hard-drives [1][2][3]. Not only can phase change materials switch in a matter of picoseconds [4-6], they are also able to retain information for very long periods of time [2,7]. In addition, they scale extremely well to the nanoscale, with present-day demonstrations of 6nm cells employing electrical switching [7,8]. Specifically Ge 2 Sb 2 Te 5 (GST) is the most commonly used alloy for such applications. By reversibly transforming the crystalline structure between amorphous and crystalline states using electrical pulses, the resistive properties of the thin film can be varied by several orders of magnitude [9]. PCMs also demonstrate a large difference in reflectivity upon phase-transition, an effect that has led to their commercial use in optical storage discs, such as DVDs and Blue-Ray discs [10].Herein, we propose a chalcogenide-based integrated photonic memory element, with the ability for sub-nanosecond reading and writing, while still retaining data for several years. We analyze the photonic architecture as illustrated in Fig.1(a), which comprises a microring resonator coupled to nanophotonic waveguides. In contrast to photonic memories and mechanical resonators [11], the photonic circuit allows for static tunability which is maintained when the control light has been switched off. We base our analysis on silicon nitride-on-insulator substrates for broadband optical applications. Silicon nitride can be used to fabricate high-quality nanophotonic components for both telecoms and visible applications [12,13]. The feeding waveguide is optimized for single mode operation at 1550nm input wavelength. Inside the ring resonator a small region of the waveguide is suspended similar to waveguides used for nanomechanical sensing [14] and opto-mechanical operation [15]. A thin film of phase change material (GST) is...