A General Statistical Equivalent-Circuit-Based De-Embedding Procedure for High-Frequency Measurements

Ferndahl, Mattias; Fager, Christian; Andersson, Kristoffer; Linnér, Peter; Vickes, H.‐O.; Zirath, Herbert

doi:10.1109/tmtt.2008.2007188

Cited by 30 publications

(12 citation statements)

References 19 publications

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“…The operating frequency is from 0.4 to 40 GHz. An error function [20] is used to calculate deembedding errors between the deembedded and known intrinsic S-parameters of the hypothetical DUTs.…”

Section: A Deembedding Comparison Using Simulationmentioning

confidence: 99%

A Simple and Accurate Pad-Thru-Short Deembedding Method Based on Systematic Analysis for RF Device Characterization

Lee

Lin

2015

IEEE Trans. Electron Devices

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In this paper, a practical scalable cascade-based pad-thru-short deembedding methodology with the characteristic of wave propagation considered is presented for RF device characterization for the first time. Through an analysis, it is found that nonshielding thru and leg lines operate in quasi-transverse electromagnetic and quasi-transverse magnetic modes of wave propagation, respectively. To subtract the leg effect in different lengths based on transmission line parameters without shielding, this difference in operating modes between the thru and leg is addressed in this new method. Compared with a conventional scalable method with shielding, the presented method without violating the process design rules can achieve comparable results. Deembedding accuracy can be maintained without using numerous dummies. Therefore, this scalable deembedding method with simpler layout design and fabrication process is more practical for automatic ON-wafer measurements of different sized devices.

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Section: A Deembedding Comparison Using Simulationmentioning

confidence: 99%

A Simple and Accurate Pad-Thru-Short Deembedding Method Based on Systematic Analysis for RF Device Characterization

Lee

Lin

2015

IEEE Trans. Electron Devices

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“…The performance of waveguide components can be measured with vector network analyzers(VNA).All measurement equipment requires transitions from their ports (usually coaxial) to the individual waveguide ports of the device under test(DUT) [5] .De-embedding is the process of mathematically removing the influence of transitions from the measured results.…”

Section: A Why Use De-embedding?mentioning

confidence: 99%

De-embedding research in cold test of output window of Gyro-TWT (gyro traveling wave tube)

Liu¹,

Wang²,

Yan³

2014

2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction M

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in many S-parameter measurements, one would desire to make the measurement with some other setup than what one has. There may be a test fixture required between the normal coaxial calibration planes and the DUT (Device Under Test); it may be useful to see the DUT performance with a certain matching network in place, and may be desired to see what the subsystem performance would be when the given DUT is inserted, etc. One way of handling these chores within the instrument itself is through embedding and de-embedding. The de-embedding technique, it is the process of mathematically subtracting networks from the measured result. This technique has been around for many years and has been subject to a number of refinements to improve accuracy and applicability [1] . The purpose of this article is to discuss the implementation in the broad band TE10-TE01 cruciform mode converter [2] , and to provide a number of examples and procedures to show how they can be used to get the required measurement results. This literature aims to provide two kinds of de-embedding techniques to conclude the best suitable method of the converter. Since the Sparameter data for the DUT is available from the measurement and the S-parameter data for the network to be de-embedded is available (either from an s2p file or from a circuit model), if multiplying one transfer matrix by another is equivalent to connecting in the new network, then multiplying by the inverse of that T matrix is equivalent to removing it [3] . The first method is according to the principle above to do the de-embedding work. Based on the principle, this passage has proved that whether the principle is suitable to the microwave measurements through two kinds of methods. It turns out to be that the methods mentioned above can effectively reduce error and is more accurate to the actual value of the DUT when the data which needs to be deembedded is accurate, but when the data is resonant, a big error may occur. Except from the above two methods (from one principle), we can also get the actual value by using the other principle, that is to modify the error model parameters to get the actual value. Through repeated measurement, we finally get the required results to estimate the properties of the DUT. Also, through comparative analysis, we find the different results of the S parameter before and after de-embedding, the de-embedding results are obviously better than the ones before de-embedding. Therefore, the de-embedding technique can help us get much more accurate information on the DUT. All in all, the theory and the experiment both illustrate the feasibility and effectiveness of the de-embedding technique.

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“…In order to point out the advantages of using the proposed model and parameter extraction methodology, the model in Figure 4 was implemented in Agilent's ADS circuit simulator for two cases: using f-independent series elements (the corresponding model is referred to as FIM), and using (8) and (9) to represent the f dependent nature of the series resistances and inductances of the structure (i.e., FDM model). Then, a comparison involving S 11 and S 22 is performed as S 12 and S 21 present a magnitude below À30 dB within the measured f-range because of the excellent isolation between ports in the fabricated test fixture.…”

Section: Model Verificationmentioning

confidence: 99%

Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz

Álvarez-Botero¹,

Torres‐Torres²,

Murphy‐Arteaga³

2012

Int J RF and Microwave Comp Aid Eng

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We present a circuit model and parameter determination methodology for test fixtures used for on‐wafer S‐parameter measurements on CMOS devices. The model incorporates the frequency dependence of the series resistances and inductances due to the skin effect occurring in the metal pads. Physically based representations for this effect allow for excellent theory‐experiment correlations for different dummy structures, as well as when de‐embedding transistor measurements up to 60 GHz. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE 23: 655–661, 2013.

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A General Statistical Equivalent-Circuit-Based De-Embedding Procedure for High-Frequency Measurements

Cited by 30 publications

References 19 publications

A Simple and Accurate Pad-Thru-Short Deembedding Method Based on Systematic Analysis for RF Device Characterization

A Simple and Accurate Pad-Thru-Short Deembedding Method Based on Systematic Analysis for RF Device Characterization

De-embedding research in cold test of output window of Gyro-TWT (gyro traveling wave tube)

Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz

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