A General theory of p–n junction capacitance

Parrott, J.E.; Leonidou, L. Ph.

doi:10.1002/pssa.2210250121

Phys. Stat. Sol. (a)

1974

DOI: 10.1002/pssa.2210250121

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A General theory of p–n junction capacitance

J.E. Parrott¹,

L. Ph. Leonidou²

Abstract: Using stored energy considerations an operationally well defined general expression is derived for the capacitance of a p–n Junction. The separation of this capacitance into space charge and diffusion parts is carried out in a functional rather than a regional manner, based on the distinction between the time dependences of dielectric relaxation and carrier recombination.

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Cited by 9 publications

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The space charge capacitance of a p–n junction

Parrott

1974

Phys. Stat. Sol. (a)

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Starting from a general expression for the space charge capacitance derived elsewhere and the Moll assumption of constant quasi-Fermi levels, a representation of this capacitance in the form of a convergent series is presented. The first and most important term in this seriesis the point at which the electron and hole concentrations are equal and E ( 0 ) and M(zo) are the electric field and net doping concentration a t that point. This result is used t o derive a formula for the space charge capacitance of an abrupt asymmetric junction which is in better agreement with experiment than the Schottky-Shockley formula. Onpr&sente partant d'une formule gentkale pour la capacite de la chargc d'espace tire d'ailleurs e t de la hypothbe de Moll que les niveaux quasi-Fermi sont constants, une representation de cette capacit6 dans la forme d'une serie convergente. Le prcmier termc et le plus important dans cette series est C, = EE, ---pN(zo) -oh zo est le point oh les concentrations des 6lectrons et des trous sont &gales, et E(0) et M ( z 3 ) sont le champ Blectrique et la concentration dopante nette it ce point. On emploie ce resultat pour tirer une expression pour la capacit6 de la charge d'espace d'une jonction abrupte asymmetrique qui est en meillenr accord avec des experiences que la formule Schottky-Shockley. c = --kT p d Y f d Y ' dR 2 cosh2 Y m D J J " -Y P -YP

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The space charge capacitance of a p–n junction

Parrott

1974

Phys. Stat. Sol. (a)

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Space-charge capacitance of an abrupt p–n junction

Parrott¹,

Tieng²

1976

Phys. Stat. Sol. (a)

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Theoretical study of the depletion-layer capacitance in abrupt p–n semiconductor junctions

Weinhausen¹

1978

Phys. Stat. Sol. (a)

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For evaluation of capacitance‐voltage measurements on an abrupt pn semiconductor junction with reverse‐biased depletion layer an approximation equation for the quantity Ue is presented, where Ue is the value at the intercept of the extrapolated plot C−2 to the applied voltage axis. The approximation formula is compared with an exact calculation. The maximum error in the approximate relationship for Ue is less than 3% in a wide range of impurity density and applied reverse voltage, therefore the discrepancy in the space‐charge layer capacitance Cs is less than 1.5%. Cs is given by the relationship, which follows from Shockley's theory, if (U + UD) is replaced by (U + Ue).

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A General theory of p–n junction capacitance

Cited by 9 publications

References 10 publications

The space charge capacitance of a p–n junction

The space charge capacitance of a p–n junction

Space-charge capacitance of an abrupt p–n junction

Theoretical study of the depletion-layer capacitance in abrupt p–n semiconductor junctions

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