A generalised approach to lifetime measurement in pn junction solar cells

Dhariwal, S.R.; Vasu, N.K.

doi:10.1016/0038-1101(81)90112-x

Cited by 39 publications

(12 citation statements)

References 14 publications

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“…The analysis of the results show that the charge carriers' effective lifetime decreases with the magnetic field. These results are in agreement with theoretical results obtained by Alain et al [13]. However, we remark that for magnetic values 0.02 mT B  , the variations are very slow.…”

Section: Resultssupporting

confidence: 93%

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

Diasso¹,

Sam²,

Zouma³

et al. 2020

SGRE

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This manuscript presents a simple method for excess minority carriers' lifetime measurement within the base region of p-n junction polycrystalline solar cell in transient mode. This work is an experimental transient 3-Dimensionnal study. The magnitude of the magnetic field B is varied from 0 mT to 0.045 mT. Indeed, the solar cell is illuminated by a stroboscopic flash with air mass 1.5 and under magnetic field in transient state. The experimental details are assumed in a figure. The procedure is outlined by the Open Circuit Voltage Decay analysis. Effective minority carrier lifetime is calculated by fitting the linear zone of the transient voltage decay curve because linear decay is an ideal decay. The kaleidagraph software permits access to the slope of the curve which is inversely proportional to the lifetime. The external magnetic effects on minority carriers' effective lifetime is then presented and analyzed. The analysis shows that the charge carrier's effective lifetime decrease with the magnetic field increase.

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Section: Resultssupporting

confidence: 93%

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

Diasso¹,

Sam²,

Zouma³

et al. 2020

SGRE

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“…In addition, the dependence of the exponential terms weakens as V becomes large and negative. Therefore, the carrier transport is dominated by the generation–recombination of minority carriers and the current density is expressed as $ J \approx J_{\rm r} = {{q n_{\rm i} W}\over{2 \tau}} \propto {{1}\over{\tau}} $ , which is valid when the absolute value of the reverse bias is approximately greater than 2 kT / q 28. This analysis suggests that $ J \propto {{1}\over{d}} $ given a constant W, since $ {{1}\over{\tau}} \propto {{1}\over{d}} $ as confirmed above (Figure 4a and Equation (3)).…”

mentioning

confidence: 99%

Minority Carrier Lifetimes and Surface Effects in VLS‐Grown Axial p–n Junction Silicon Nanowires

et al. 2011

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The minority carrier lifetimes of VLS‐grown axial p–n junction silicon nanowires are characterized by the reverse recovery transients of electrically injected minority carriers. Nanowire‐diameter‐dependent lifetimes and various electrical properties indicate the enhanced surface recombination with decreasing diameters, suggesting the significance of surface passivations for effective carrier transport in photovoltaic applications.

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“…3) The diffusion lengh (L) giving the distance traveled by the photogenerated carriers [37] [38], for a time (τ) that is their lifetime [39] [40] [41], with the diffusion (D) [42] and mobility (μ) [43] coefficients 4) the excess minority carriers recombination that occurs in the volume is associated with the lifetime (τ) and that on the surfaces [44] are called surface recombination velocity, (Se at the n + front, Sf at the junction n + /p, Sb at the rear p/p + , and Sg at the grain joints in the 3D model) [45] [46] [47] [48] [49].…”

Section: Introductionmentioning

confidence: 99%

Back Illuminated N/P/P<sup>+</sup> Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

Sall¹,

Diarisso²,

Fall³

et al. 2021

EPE

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A bifacial silicon solar cell under monochromatic illumination in frequency modulation by the rear side is being studied for the optimization of base thickness. The density of photogenerated carriers in the base is obtained by resolution of the continuity equation, with the help of boundary conditions at the junction surface (n + /p) and the rear face (p/p + ) of the base. For a short wavelength corresponding to a high absorption coefficient, the AC photocurrent density is calculated and represented according to the excess minority carrier's recombination velocity at the junction, for different modulation frequency values. The expression of the AC recombination velocity of excess minority carriers at the rear surface of the base of the solar cell is then deduced, depending on both, the absorption coefficient of the silicon material and the thickness of the base. Compared to the intrinsic AC recombination velocity, the optimal thickness is extracted and modeled in a mathematical relationship, as a decreasing function of the modulated frequency of back illumination. Thus under these operating conditions, a maximum short-circuit photocurrent is obtained and a low-cost bifacial solar cell can be achieved by reducing material (Si) to elaborate the base thickness.

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A generalised approach to lifetime measurement in pn junction solar cells

Cited by 39 publications

References 14 publications

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

Minority Carrier Lifetimes and Surface Effects in VLS‐Grown Axial p–n Junction Silicon Nanowires

Back Illuminated N/P/P<sup>+</sup> Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

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A generalised approach to lifetime measurement in pn junction solar cells

Cited by 39 publications

References 14 publications

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

Minority Carrier Lifetimes and Surface Effects in VLS‐Grown Axial p–n Junction Silicon Nanowires

Back Illuminated N/P/P&lt;sup&gt;+&lt;/sup&gt; Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

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Back Illuminated N/P/P<sup>+</sup> Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness