A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor

Fung, C.D.; Cheung, P.W.; Ko, Wen H.

doi:10.1109/t-ed.1986.22429

Cited by 313 publications

(180 citation statements)

References 25 publications

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“…On a silicon surface, since there are no SiNH 2 sites, only interactions described by Eqs. (2) and (3) take place [15,16]. The de¯ection of the cantilever should be due to the sum of all the interactions happening at the surface and the effect of the electrolyte layer on the silicon surface [16].…”

Section: Deflection Of Au-coated Cantilevers In Different Ph Solutionsmentioning

confidence: 99%

Detection of pH variation using modified microcantilever sensors

Hansen

et al. 2001

Sensors and Actuators B: Chemical

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A micromechanical technique for measuring solution pH using modi®ed silicon (SiO 2 ) and silicon nitride (Si 3 N 4 ) microcantilevers is described. As the modi®ed surface of the cantilever accumulates charge proportional to the pH of the surrounding liquid, the cantilever undergoes bending due to the differential surface stress. Results are presented for chemically modi®ed (4-aminobutyltriethoxysilane, 11-mercaptoundecanoic acid) and metal-modi®ed (Au/Al) surfaces over a pH range 2±12. Aminosilane-modi®ed SiO 2 /Au cantilevers performed robustly over pH range 2±8 (49 nm de¯ection/pH unit), while Si 3 N 4 /Au cantilevers performed well at pH 2±6 and 8±12 (30 nm de¯ection/pH unit). The in¯uences of other ions on cantilever bending were found to be negligible below 10 À2 M concentration. #

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Section: Deflection Of Au-coated Cantilevers In Different Ph Solutionsmentioning

confidence: 99%

Detection of pH variation using modified microcantilever sensors

Hansen

et al. 2001

Sensors and Actuators B: Chemical

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“…It spans from catalysis, 2,3 surface passivation to the fabrication of electronic devices. 4,5 The growth of ultrathin epitaxial oxide films has greatly improved the possibilities for their detailed investigations. Several studies have been carried out for magnesium oxide.…”

Section: Introductionmentioning

confidence: 99%

Formation of surface color centers at differently coordinated sites: MgO/Ag(1,1,19)

2003

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In order to find criteria for discrimination between surface color centers at terraces and steps, and bulk color centers, the characteristic losses of these centers have been investigated by electron energy loss spectroscopy on an epitaxial MgO film grown on a Ag ͑1,1,19͒ surface. This film contains a significantly higher step density compared with a film grown on Ag͑100͒. The generation of four distinct losses at 2.0, 2.4, 2.8, and 3.4 eV and a broad loss centered at 5.5 eV have been observed that are induced by electron bombardment of the MgO surface. The latter loss is attributed to bulk color centers (F b centers͒. By comparing the measured loss energies with experiments performed on MgO/Ag͑100͒ and with theoretical literature data, the observed losses at 2.0 and 2.8 eV can be consistently assigned to transitions of color centers located on step sites, whereas those at 2.4 and 3.4 eV are attributed to terrace sites. The kinetics of color center formation during electron bombardment, as well as the annihilation of F centers by simple exposure to O 2 gas at room temperature, was determined and compared for differently coordinated color centers. While all surface color centers follow the same kinetics, we show that the F b centers can only decay as long as the existence of surface color centers provides active sites for dissociating oxygen molecules. This corroborates the assignment of F b centers.

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“…It consists of a chemical part and an MOS transistor part. In chemical part, two series capacitances and represent the equivalent Gouy-Chapman and Helmholtz capacitance (Grattarola et al, 1992), which has been developed by site-binding model and the electrical double-layer theory (Fung et al, 1986). Two voltage sources and are connected in series to denote the voltage components of chemical threshold voltage of EGFET.…”

Section: Egfet-operational Amplifiermentioning

confidence: 99%