A generic electroluminescent device for emission from infrared to ultraviolet wavelengths

Zhao, Yingbo; Wang, Vivian; Lien, Der Hsien; Javey, Ali

doi:10.1038/s41928-020-0459-z

Cited by 29 publications

(48 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to capture the basic physics of the device, 2D simulations of the device cross section were performed using Sentaurus TCAD (Synopsys) following a previously described approach. [ 21 ] The modeled device consisted of a layer of semiconducting material between two 1.4 nm tall edge contacts representing CNT source contacts. The underlying gate oxide layer (50 nm SiO 2 with ε = 3.9 unless otherwise stated) was contacted by a bottom gate electrode.…”

Section: Methodsmentioning

confidence: 99%

“…[ 18,19 ] To this end, self‐assembled carbon nanotube (CNT) networks [ 20 ] can be used as a porous top contact to increase contact density and emission intensity. [ 21 ] Due to the lateral nature of charge injection, the emitting material does not need to be suited for further processing, and optical properties can be easily probed without requiring transparent contacts, unlike vertical multilayered devices in which the emitting layer is sandwiched between multiple films.…”

Section: Figurementioning

confidence: 99%

“…In this work, we study the performance limits of a generic AC electroluminescent device in which direct bipolar charge injection is achieved with a single CNT network electrode, using numerical device simulations to corroborate and understand experimental measurements. We previously demonstrated such a device for applications in electroluminescence spectroscopy and sensing, [ 21 ] but more elaborate knowledge is required to understand the scope of compatible materials as well as the operating parameters that are optimal for different material samples. Through studies of device scaling, we show that turn‐on characteristics of the AC electroluminescent device are controlled by vertical scaling of the device's dimensions.…”

Section: Figurementioning

confidence: 99%

“…[ 13 ] The proposed mechanism behind such a driving scheme has been discussed previously. [ 21 ] To briefly recapitulate, electrons accumulate in the emitter layer when the gate voltage is positive, causing there to be a large electron concentration but low hole concentration. When the gate voltage switches from positive to negative, the field across the device cannot change immediately, so the applied gate voltage instead drops across resistive components such as the emitter material.…”

Section: Figurementioning

confidence: 99%

See 3 more Smart Citations

Performance Limits of an Alternating Current Electroluminescent Device

2020

Self Cite

View full text Add to dashboard Cite

The use of an alternating current (AC) voltage is a simple, versatile method of producing electroluminescence from generic emissive materials without the need for contact engineering. Recently, it was shown that AC‐driven, capacitive electroluminescent devices with carbon nanotube network contacts can be used to generate and study electroluminescence from a variety of molecular materials emitting in the infrared‐to‐ultraviolet range. Here, performance trade‐offs in these devices are studied through comprehensive device simulations and illustrative experiments, enhancing understanding of the mechanism and capability of electroluminescent devices based on alternating as opposed to direct current (DC) schemes. AC‐driven electroluminescent devices can overcome several limitations of conventional DC‐driven electroluminescent devices, including the requirement for proper alignment of material energy levels and the need to process emitting materials into uniform thin films. By simultaneously optimizing device geometry, driving parameters, and material characteristics, the performance of these devices can be tuned. Importantly, the turn‐on voltage of AC‐driven electroluminescent devices approaches the bandgap of the emitting material as the gate oxide thickness is scaled, and internally efficient electroluminescence can be achieved using low‐mobility single‐layer emitter films with varying thicknesses and energy barrier heights relative to the contact.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

See 2 more Smart Citations

Performance Limits of an Alternating Current Electroluminescent Device

2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…Tunneling junctions, [49,51,53,54] e.g., QW structures, and MIS structures, that carriers are injected via Fowler-Nordheim tunneling, are demonstrated in Section 3.2. Finally, transient-2DLEDs [52][53][54]167] which functions under alternating current injection with simplified device geometry are analyzed in Section 3.3.…”

Section: Dledsmentioning

confidence: 99%

Excitonic Emission in Atomically Thin Electroluminescent Devices

Zhou

et al. 2021

Laser & Photonics Reviews

View full text Add to dashboard Cite

2D layered materials derived from their bulk counterparts are intriguing platforms for the exploration of novel optoelectronic applications and fundamental physical phenomena. Among the 2D family, 2D semiconductors with sizable bandgaps, such as transitional metal dichalcogenides and black phosphorus, are promising building blocks for next‐generation light‐emitting applications due to their extraordinary optical and photoelectrical properties. Originating from the combined effect of quantum confinement and reduced dielectric screening, the excitonic effect is dominant in ultrathin 2D semiconductors and of essential importance for the performance of 2D light‐emitting diodes (2DLEDs). Herein, a systematic summary and review is presented, where excitonic properties and the main influencing factors, including Coulomb interactions, band structures, carrier dynamics, and external electrical fields, are first analyzed. The recent progress of 2DLEDs as well as their excitonic emission features and electroluminescence manipulation are then introduced. Lastly, the ongoing challenges and future prospects of 2DLEDs are discussed.

show abstract

Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides

et al. 2023

View full text Add to dashboard Cite

2D monolayer transition metal dichalcogenides (TMDCs) show great promise for the development of next‐generation light‐emitting devices owing to their unique electronic and optoelectronic properties. The dangling‐bond‐free surface and direct‐bandgap structure of monolayer TMDCs allow for near‐unity photoluminescence quantum efficiencies. The excellent mechanical and optical characteristics of 2D TMDCs offer great potential to fabricate TMDC‐based light‐emitting diodes (LEDs) featuring good flexibility and transparency. Great progress has been made in the fabrication of bright and efficient LEDs with varying device structures. In this review, the aim is to provide a comprehensive summary of the state‐of‐the‐art progress made in the construction of bright and efficient LEDs based on 2D TMDCs. After a brief introduction to the research background, the preparation of 2D TMDCs used for LEDs is briefly discussed. The requirements and the corresponding challenges to achieve bright and efficient LEDs based on 2D TMDCs are introduced. Thereafter, various strategies to enhance the brightness of monolayer 2D TMDCs are described. Following that, the carrier‐injection schemes enabling bright and efficient TMDC‐based LEDs along with the device performance are summarized. Finally, the challenges and future prospects regarding the accomplishment of TMDC‐LEDs with ultimate brightness and efficiency are discussed.

show abstract

A generic electroluminescent device for emission from infrared to ultraviolet wavelengths

Cited by 29 publications

References 29 publications

Performance Limits of an Alternating Current Electroluminescent Device

Performance Limits of an Alternating Current Electroluminescent Device

Excitonic Emission in Atomically Thin Electroluminescent Devices

Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides

Contact Info

Product

Resources

About