A Global Heat Transfer Model for a New Silicon Crystal Growth System

Abstract

To suppress turbulent flow in a large silicon melt, Drs. Ciszek and Wang at NREL have proposed and patented a new Czochralski (CZ) growth furnace that has a shallow melt. To supply silicon to a shallow melt for long ingot growth, a crucible with partitions has been designed which allows continuous growth of a crystal by feeding silicon pellets into a dedicated compartment of the crucible. In this paper, temperature distributions in the entire furnace are simulated for the new system in a simplified manner as the first step to compare with those more sophisticated simulation results on a conventional CZ growth system. The effects of power level of individual heaters on temperature distribution in the melt are discussed. The simulation results show that a favorable temperature distribution can be obtained in the new furnace through changing the power ratio of the side and bottom heaters.