2024
DOI: 10.3390/s24082646
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A gm/ID-Based Low-Power LNA for Ka-Band Applications

David Galante-Sempere,
Jeffrey Torres-Clarke,
Javier del Pino
et al.

Abstract: This article presents the design of a low-power low noise amplifier (LNA) implemented in 45 nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA achieves a very low power consumption of only 1.98 mW andis the first time the gm/ID approach is applied at such a high frequency. The circuit is suitable for Ka-band applications with a central frequency of 28 GHz, as the circuit is intended to operate in the n257 frequency band defined by the 3GPP 5G new radio (NR) specification. The… Show more

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