A graphene spin diode based on Rashba SOI

Mohammadpour, Hakimeh

doi:10.1016/j.jmmm.2015.02.080

Cited by 5 publications

(1 citation statement)

References 39 publications

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“…A large peak-to-valley ratio is reported in vertical hetero-structures transistors [8]. Resonant tunneling devices based on the spin-resolved splitting of energy levels in the presence of spin-orbit interaction has also emerged [9][10][11][12][13][14]. At our previous work we have modeled a pnp-GNR-FET in which the pn barriers result in discrete energy levels and resonant tunneling current [15].…”

Section: Introductionmentioning

confidence: 99%

Quantum dot resonant tunneling FET on graphene

Mohammadpour

2016

Physica E: Low-dimensional Systems and Nanostructures

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At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance (NTC).

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Section: Introductionmentioning

confidence: 99%

Quantum dot resonant tunneling FET on graphene

Mohammadpour

2016

Physica E: Low-dimensional Systems and Nanostructures

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Spin transport in graphene superlattice under strain

Sattari

2016

Journal of Magnetism and Magnetic Materials

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A spin current rectifier

Eyni

Mohammadpour

2017

Int. J. Mod. Phys. B

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Current modulation and rectification is an important subject of electronics as well as spintronics. In this paper, an efficient rectifying mesoscopic device is introduced. The device is a two terminal device on the 2D plane of electron gas. The lateral contacts are half-metal ferromagnetic with antiparallel magnetizations and the central channel region is taken as ferromagnetic or normal in the presence of an applied magnetic field. The device functionality is based on the modification of spin-current by tuning the strength of the magnetic field or equivalently by the exchange coupling of the channel to the substrate. The result is that the (spin-) current depends on the polarity of the bias voltage. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. We analyze the results in terms of the spin-dependent barrier in the channel. Detecting the strength of the magnetic field by spin polarization is also suggested.

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A graphene spin diode based on Rashba SOI

Cited by 5 publications

References 39 publications

Quantum dot resonant tunneling FET on graphene

Quantum dot resonant tunneling FET on graphene

Spin transport in graphene superlattice under strain

A spin current rectifier

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