A Grinding-Based Manufacturing Method for Silicon Wafers: Generation Mechanisms of Central Bumps on Ground Wafers

Sun, Wangping; Pei, Zhijian; Fisher, Graham R.

doi:10.1080/10910340600710089

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…They suggested that the inclination angle of the spindle needed to be determined appropriately to compensate the concave shape caused by the unsuitable process parameters. Sun et al [14][15][16] systematically illustrated the process flow considering the chuck table dressing and wafer grinding, and introduced that the method to control TTV was similar to that for chuck table shape control. Their model predicted the variation trend of wafer TTV characteristic and chuck table shape, and qualitative experiments were conducted to validate the simulation results.…”

Section: Introductionmentioning

confidence: 99%

An Investigation on the Total Thickness Variation Control and Optimization in the Wafer Backside Grinding Process

et al. 2022

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The wafer backside grinding process has been a crucial technology to realize multi-layer stacking and chip performance improvement in the three dimension integrated circuits (3D IC) manufacturing. The total thickness variation (TTV) control is the bottleneck in the advanced process. However, the quantitative analysis theory model and adjustment strategy for TTV control are not currently available. This paper developed a comprehensive simulation model based on the optimized grinding tool configuration, and several typical TTV shapes were obtained. The relationship between the TTV feature components and the spindle posture was established. The linear superposition effect of TTV feature components and a new formation mechanism of TTV shape were revealed. It illustrated that the couple variation between the two TTV feature components could not be eliminated completely. To achieve the desired wafer thickness uniformity through a concise spindle posture adjustment operation, an effective strategy for TTV control was proposed. The experiments on TTV optimization were carried out, through which the developed model and TTV control strategy were verified to play a significant role in wafer thickness uniformity improvement. This work revealed a new insight into the fine control method to the TTV optimization, and provided a guidance for high-end grinding tool and advanced thinning process development.

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Section: Introductionmentioning

confidence: 99%

An Investigation on the Total Thickness Variation Control and Optimization in the Wafer Backside Grinding Process

et al. 2022

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“…The simulation outcomes of the model were compared with the experimental outcomes to verify the correctness of the model. Sun et al [5][6][7][8] developed the model of grinding marks of a single grain and the mathematical model of the grinding shape of the wafer. Then the adjustment of the wafer surface shape, the impact of the shape of chuck on the grinding marks, and generation mechanisms of central bumps on ground wafers were studied.…”

Section: Introductionmentioning

confidence: 99%

The effect of the chuck shape on the wafer topography in back grinding of wafer with outer rim

Zhu

Yao

Guo

et al. 2021

Advances in Mechanical Engineering

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Back Grinding of Wafer with Outer Rim (BGWOR) is a novel method for carrier-less thinning of silicon wafers. Silicon wafers are widely used in integrated circuits (ICs). The topography of the wafer will not only directly affect the efficiency of subsequent processing of semiconductor devices, but correspondingly affect the performance and life of these devices. However, there are few studies on the shape of the ground wafer in BGWOR. In this paper, the mathematical model of the wafer topography in BGWOR was developed. With this model, the radial thickness and total thickness variation (TTV) of a wafer under different parameters, including inclination angles and radii of grinding wheel for dressing chuck, were simulated by MATLAB. Inclination angles and radii of grinding wheels for the dressing chuck had a great influence on the radial thickness and TTV of a wafer in the BGWOR. Lastly, the pilot experiments were conducted to validate the theoretical model of grinding topography and TTV of the wafer in BGWOR. To enhance the flatness of the ground wafer, it is essential to control the shape of the dressing chuck. The research results are helpful to the optimization of the dressing process of the chuck in the BGWOR.

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“…Regardless of changes in wheel specifications and grinding conditions, the cutting path density sharply increases at the wafer center since the center is a mathematical singularity where the wafer radius r takes 0. Because the wafer is always overcut at its center, in case that the tilt angles are preset to = = 0, a center concave wafer geometry is often formed (Zhang, et al, 2006, Sun, et al, 2006 if the loop stiffness of the grinding system is not high enough.…”

Section: Cutting Path Densitymentioning

confidence: 99%

Process study on large-size silicon wafer grinding by using a small-diameter wheel

Ebina

Yoshimatsu

Zhou

et al. 2015

JAMDSM

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Silicon (Si) is a fundamental material in the semiconductor industry. The advancement of semiconductor devices have offered convenience and comfort to our life. In order to raise productivity and economic efficiency, the semiconductor industry keeps looking for use of larger size Si wafers. The next generation wafer is expected to be sized as large as 450 mm in diameter. Many wafering processes including lapping, grinding and polishing have been studied and grinding technology stands out as the most promising process for large-size Si wafer manufacturing. In the current in-feed grinding scheme adopted for Si wafers, the wheel diameter used is generally equal to or larger than the wafer diameter. In turn, larger diameter wheels require larger size machine tools and production lines, which lead to increase in manufacturing costs. In this paper, both experiment and kinematical analysis have been carried out to investigate the feasibility of using small diameter grinding wheels to grind large size Si wafers, mainly focusing on the effects of wheel diameter on wafer geometry and surface roughness. The results show that both wheels generated a central convex profile on the wafer and the small wheel achieved a slightly better flatness than the large wheel. The surface roughness were similar one to another for most area of the wafer except the fringe around its edge. All these experimental results were predicable by the kinematic model established in this paper. Particularly, the kinematic analysis found that the cutting path made by small wheel with diameter equaling to the wafer radius was parallel each other at the fringe around wafer edge, which directly worsened the surface roughness.

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A Grinding-Based Manufacturing Method for Silicon Wafers: Generation Mechanisms of Central Bumps on Ground Wafers

Cited by 6 publications

References 11 publications

An Investigation on the Total Thickness Variation Control and Optimization in the Wafer Backside Grinding Process

An Investigation on the Total Thickness Variation Control and Optimization in the Wafer Backside Grinding Process

The effect of the chuck shape on the wafer topography in back grinding of wafer with outer rim

Process study on large-size silicon wafer grinding by using a small-diameter wheel

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