A Growth and Morphology Study of Organic Vapor Phase Deposited Perylene Diimide Thin Films for Transistor Applications

Abstract

In this work, an in-depth growth study with organic vapor phase deposition of the n-type semiconductor N, 4,9, ) is presented. The organic vapor phase deposition technique allows independent control of more parameters than traditional vapor thermal evaporation, namely, not only deposition flux and substrate temperature but also chamber pressure can be changed. We study the influence of these parameters on the morphology and microstructure of PTCDI-C 13 thin films, and correlate them with electrical properties. Films of PTCDI-C 13 on SiO 2 surfaces modified with poly-(Rmethylstyrene) exhibit Stranski-Krastanov growth. Upon increasing deposition flux, the resulting surface morphology changes from rough films, characterized by needle growth, to smoother films consisting of small, uniform grains. Notably, increasing the pressure shifts this morphology transition toward lower deposition fluxes. All X-ray reflectivity measurements are indicative of PTCDI-C 13 molecules assembling in well-ordered π-stacks parallel to the substrate. This creates the opportunity to grow PTCDI-C 13 films at conditions maximizing deposition throughput and efficiency, while maintaining the structural and thus electrical quality of the PTCDI-C 13 thin films. Electron mobilities up to 0.1 cm 2 /(Vs) have been demonstrated for a deposition rate of 6.7 Å/s, showing that organic vapor phase deposition is a high-throughput deposition technique for perylene diimide n-type organic semiconductors.

Experimental evidence for an optical interference model for vibrational sum frequency generation on multilayer organic thin film systems. I. Electric dipole approximation

“…This result can be rationalized by considering how the orientational distribution of molecules may change with increased organic thickness. There are numerous studies of PTCDI-C 8 and its derivatives that indicate the mesoscopic morphology at the outer interface varies significantly and becomes more rough from the initial monolayer up to thicknesses of 100 nm or more 35,42,80 and our own observations from AFM are consistent with those reports. 36 Thus, for the symmetric mode, the fit results are consistent with broadening of the polar orientational distribution, resulting in less VSFG signal for both polarization experiments.…”

Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret

“…[ 16 ] N‐type organic small molecular semiconductors of PTCDI‐C 13 were used as buffer layers. [ 26 ] Figure a,b shows the transfer characteristics of pentacene OFETs with PVN and PS charge‐storage dielectrics, respectively. The OFETs with PVN dielectric exhibit typical p‐channel characteristics.…”

Supramolecular Architecture and Electrical Properties of a Perylene Derivative in Physical Vapor Deposited Films

“…Langmuir, 14,15 Langmuir-Blodgett (LB), 16,17 Layer-by-Layer (LbL), 16,18 spin-coating, 19,20 casting 21,22 and physical vapor deposition (PVD) 10,23 techniques are the most frequently applied in the fabrication of organic-based nanostructured films. In particular, PVD is one of the most common deposition technologies of small organic molecules, displaying high control on the supramolecular architecture of the films 24,25 Indeed, the molecular organization plays an important role and mediates the electrical and optical properties of the films toward optimization of the device performance 26 . The relevance of the technique can be understood from the results found in the manufacture of organic light emitting diodes (OLEDs) 27 and transistors, 28 for instance.…”