A growth diagram for chemical beam epitaxy of GaP1−<i>x</i>N<i>x</i> alloys on nominally (001)-oriented GaP-on-Si substrates

Saddik, Karim Ben; García, Borja Sánchez; Fernández-Garrido, Sergio

doi:10.1063/5.0067209

APL Materials

2021

DOI: 10.1063/5.0067209

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A growth diagram for chemical beam epitaxy of GaP1−xNx alloys on nominally (001)-oriented GaP-on-Si substrates

Karim Ben Saddik

Borja Sánchez García

Sergio Fernández-Garrido

Abstract: Growth of GaP 1− N compounds on nominally (001)-oriented Si.• Model of N incorporation into GaP 1− N in chemical beam epitaxy (CBE).• Growth diagram illustrating the composition and properties of GaP 1− N alloys.• Demonstration of single-phase and flat GaP 1− N layers for up to ≈ 0.04.• Demonstration of CBE feasibility for the growth of GaP 1− N lattice matched to Si.

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Cited by 2 publications

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Optomechanical Cavities Based on Epitaxial GaP on Nominally (001)‐Oriented Si

Mouriño,

Mercadé,

Sinusía Lozano

et al. 2024

Adv Materials Technologies

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Gallium Phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III–V substrates to keep its crystallinity and later transferred to silicon wafers for further processing. Here, an alternative promising route for the fabrication of optomechanical (OM) cavities on GaP epitaxially grown on nominally (001)‐oriented Si is introduced by using a two‐step process consisting of a low‐temperature etching of GaP followed by selective etching of the underneath silicon. The low‐temperature (–30 °C) during the dry‐etching of GaP hinders the lateral etching rate, preserving the pattern with a deviation between the design and the pattern in the GaP layer lower than 5%, avoiding the complex process of transferring and bonding a GaP wafer to a silicon‐on‐insulator wafer. To demonstrate the quality and feasibility of the proposed fabrication route, suspended OM cavities are fabricated and experimentally characterized. The cavities exhibit optical quality factors between 103 and 104 at telecom wavelengths, and localized mechanical resonances ≈3.1 GHz with quality factors ≈63 when measured at room temperature. These results suggest a simple and low‐cost way to build GaP‐based photonic devices directly integrated on industry‐standard Si(001) photonic wafers.

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Optomechanical Cavities Based on Epitaxial GaP on Nominally (001)‐Oriented Si

Mouriño,

Mercadé,

Sinusía Lozano

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

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Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)

Ben Saddik,

Fernández-Garrido,

Volkov

et al. 2023

Journal of Applied Physics

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We investigated the chemical beam epitaxy of GaP1−xNx grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x≈0.04, it is possible to synthesize smooth and chemically homogeneous GaP1−xNx layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [110] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of {113}-faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (1¯1¯3). On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP1−xNx layers lattice matched to Si (x=0.021) or even with N content up to x=0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological–compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D–3D growth mode transition.

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A growth diagram for chemical beam epitaxy of GaP1−xNx alloys on nominally (001)-oriented GaP-on-Si substrates

Cited by 2 publications

References 37 publications

Optomechanical Cavities Based on Epitaxial GaP on Nominally (001)‐Oriented Si

Optomechanical Cavities Based on Epitaxial GaP on Nominally (001)‐Oriented Si

Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)

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