A &gt; 3 kV/2.94 m $\Omega\cdot$  cm<sup>2</sup> and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Zhang, Tao; Zhang, Jincheng; Zhou, Hong; Wang, Yi; Chen, Tangsheng; Zhang, Kai; Zhang, Yachao; Dang, Kui; Bian, Zhaoke; Zhang, Jinfeng; Xu, Shengrui; Duan, Xiaoling; Ning, Jing; Hao, Yue

doi:10.1109/led.2019.2933314

Cited by 55 publications

(14 citation statements)

References 28 publications

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“…Recently, high-performance GaN-based lateral SBD devices have received sufficient attention and many results have been reported, such as the SBDs with low Von of 0.2~0.8 V, the breakdown voltages from 1 kV to 2.7 kV and a high-power figure-of-merit (FOM) of 2.65 GW/cm 2 [1]- [22]. According to the previous reports, in order to reduce the Von, anode recess structure has been widely used for GaN lateral SBDs [4] [5].…”

Section: Introductionmentioning

confidence: 99%

2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

Chen

Liu

et al. 2021

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

Chen

Liu

et al. 2021

Solid-State Electronics

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“…The single-tube microwave rectification power reached 6 W, and the rectification peak efficiency was higher than 70%, as shown in Figure 13(c). The single-tube circuit power is 50-100 times that of Si and GaAs SBDs, which represents the highest international level of microwave high-power SBD and GaN-based SBDs also show a great potential for the next generation power electronics [112][113][114]. By using lower work-function metal molybdenum (Mo), lateral GaN SBDs demonstrated an ultra-low V on of 0.31 V, a high BV of 2.46 kV with a high-power FOM of 2.65 GW/cm 2 [113].…”

Section: Wide and Ultra-wide Bandgap Materials And Devicesmentioning

confidence: 99%

“…By using lower work-function metal molybdenum (Mo), lateral GaN SBDs demonstrated an ultra-low V on of 0.31 V, a high BV of 2.46 kV with a high-power FOM of 2.65 GW/cm 2 [113]. The development of anode engineering could further improve device characteristics to BV > 3 kV, V on of 0.38 V, and a high-power FOM of more than 3 GW/cm 2 [114].…”

Section: Wide and Ultra-wide Bandgap Materials And Devicesmentioning

confidence: 99%

Recent progress of integrated circuits and optoelectronic chips

Xiang

Han

Zhang

et al. 2021

Sci. China Inf. Sci.

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Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

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“…The high mobility of 2DEG means that AlGaN/GaN SBDs demonstrate huge performance advantages at high-frequency applications relative to vertical SBDs and maintain a low turn-on voltage as well. Recently, AlGaN/GaN SBDs were the basis for a 5.8-GHz rectifier circuit with an input power of 6.4 W and a turn-on voltage 0.38 V with a breakdown voltage (BV) of 3000 V [13,14]. The Table 1 Material parameters of Si, GaAs, 4H-SiC, GaN, Ga 2 O 3 , and diamond E g (eV), ε, µ n (cm 2 /V s), E C (MV/cm), V sat (10 7 cm/s) and BFOM (εµE b 3 , to Si) are energy bandgap, relative dielectric constant, electron mobility, critical electric field, saturation velocity and Baliga's figure of merit, respectively, and thermal conductivity of (W/m K) [4,5] Fig.…”

Section: Gan Versus Sicmentioning

confidence: 99%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

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As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

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A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Cited by 55 publications

References 28 publications

2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

Recent progress of integrated circuits and optoelectronic chips

Review of Recent Progress on Vertical GaN-Based PN Diodes

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A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Cited by 55 publications

References 28 publications

2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

Recent progress of integrated circuits and optoelectronic chips

Review of Recent Progress on Vertical GaN-Based PN Diodes

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Product

Resources

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A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique