A Guide for Material and Design Choices for Electro-Optic Modulators

Amin, Rubab; Zhizhen, Mario; Tahersima, Mohammad H.; Maiti, Rishi; Miscuglio, Mario; Dalir, Hamed; Sorger, Volker J.

doi:10.1364/ofc.2019.m4a.1

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…It has tunable electronic and optical properties [4], fast carrier dynamics [8,9] and high carrier mobility [10] enabling ultrafast conversion of photons or plasmons to electrical current or voltage [11,12]. Moreover, graphene is CMOS-compatible [13] allowing integration on wafer-scale [7,14] to realize, for example, broadband and sensitive photodetectors [15][16][17][18][19][20][21][22][23] and fast and cost-effective modulators [24][25][26][27][28]. High-speed and high responsivity photodetectors are crucial components in optical communications that convert the absorbed photons into an electrical signal [3,29].…”

Section: Introductionmentioning

confidence: 99%

On-Chip Ultrafast Plasmonic Graphene Hot Electron Bolometric Photodetector

Gosciniak¹,

Khurgin

2020

ACS Omega

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We appraise a waveguide-integrated plasmonic graphene photodetector based on the hot carrier photo-bolometric effect, with performance characterized simultaneously by high responsivity, on the scale of hundreds of A/W, and high speed on the scale of 100's of GHz. Performance evaluation is based on a theory of bolometric effect originating from the band nonparabolicity of graphene. Results compare favorably with the state-of-the-art plasmonic bolometric photodetectors, predicting up to two orders of magnitude increase in a responsivity while keeping speed on the same level, defined by the electron-lattice scattering time in graphene.

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Section: Introductionmentioning

confidence: 99%

On-Chip Ultrafast Plasmonic Graphene Hot Electron Bolometric Photodetector

Gosciniak¹,

Khurgin

2020

ACS Omega

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“…Such compact design gives the capability for increase the on-chip integration density more than 10 times compared to traditional photodetectors, which is important for on-chip computing, machine learning or neuromorphic applications. [86][87][88][89][90][91][92][93] Figure 2. a. Mode modelling of alternative structures with 2D materials that developed on top of the waveguide demonstrates that the proposed slot has a 15 times higher overlap factor when compared to the others.…”

Section: Resultsmentioning

confidence: 99%

30 GHz plasmonic slot MoTe2 photodetector integrated with silicon photonic circuits at telecom wavelength

Wang¹,

Nouri

Dalir

et al. 2023

Ultrafast Phenomena and Nanophotonics XXVII

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An experimental demonstration of a waveguide-integrated plasmonic slot photodetector based on MoTe2 with 30 GHz 3 dB roll-off bandwidth at telecom wavelength. To overcome the intrinsic low carrier mobility and weak light-matter interaction when applying two-dimensional material for optoelectronic devices, here we numerically and experimentally show a novel concept of the plasmonic slot structure to eliminate the transit time constant (τ=L^2/μV) from the device which is related to the material mobility. The nanometer-wide plasmonic slot offers a 'squeezed' mode that allows the 2d material can effectively absorb the light via band-to-band transitions with an overlap factor (Г) increasing more than 3 times compared to the bare waveguide structure. The ultra-narrow slot width reduces the carriers' drift route to tens of nanometers and is only limited by the RC time constant. The MoTe2 serves as the semiconducting light-absorbing material with its layer-dependent bandgap that encompasses the standard O-band wavelength for communications (1,260 nm -1 ,360 nm). The device's static performance under 1 V bias voltage also shows a high photoresponsivity of 0.8 A/W at 1310 nm with a low dark current of 90 nA. Furthermore, we study the slot width-dependent frequency response and static response to validate our concept, which shows that both the frequency and static response are inversely proportional to the slot width. The concept is not restricted to materials and the platform. This may pave the way for developing high-performance optoelectronic devices with materials that have unique optical and electric properties but suffer from low mobilities. [1][2][3][4][5][6][7][8][9][10][11][12][13] It has been shown that introducing plasmonic structures, cavities, resonators, or nanoparticles into waveguide-loaded systems can improve light-matter interactions. [14][15][16][17] Still, one of their biggest challenges today is the frequency response of TMDCbased devices for telecommunications or information processing. [18][19][20][21][22][23][24][25][26][27][28][29][30] For photodetectors using TMDCs as the lightabsorbing medium, this is particularly crucial.

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Comparative analysis of room temperature plasmonic graphene hot electron bolometric photodetectors

Gosciniak¹,

Khurgin²

2020

Preprint

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We appraise a waveguide-integrated plasmonic graphene photodetector based on the hot carrier photo-bolometric effect, with performance characterized simultaneously by high responsivity, on the scale of hundreds of A/W, and high speed on the scale of 100’s of GHz. Performance evaluation is based on a theory of bolometric effect originating from the band nonparabolicity of graphene. Results compare favorably with the state-of-the-art plasmonic bolometric photodetectors, predicting up to two orders of magnitude increase in a responsivity while keeping speed on the same level, defined by the electron-lattice scattering time in graphene.

show abstract

A Guide for Material and Design Choices for Electro-Optic Modulators

Cited by 4 publications

References 10 publications

On-Chip Ultrafast Plasmonic Graphene Hot Electron Bolometric Photodetector

On-Chip Ultrafast Plasmonic Graphene Hot Electron Bolometric Photodetector

30 GHz plasmonic slot MoTe2 photodetector integrated with silicon photonic circuits at telecom wavelength

Comparative analysis of room temperature plasmonic graphene hot electron bolometric photodetectors

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