A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer

Liaw, Yue-Gie; Liao, Wen‐Shiang; Wang, Mu‐Chun; Lin, Cheng-Li; Zhou, Bin; Gu, Haibin; Li, Deshi; Zou, Xuecheng

doi:10.1016/j.sse.2016.09.017

Cited by 18 publications

(2 citation statements)

References 20 publications

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“…With the help of a biasing circuit, all of the transistors operate in the saturation area. To run the OP-Amp with great stability and over a wider frequency range, a compensating circuit is used [31] as displayed in Figure 6.…”

Section: Two-stage Operational Amplifier Designmentioning

confidence: 99%

Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier

Suman¹,

Cheepurupalli²,

Allasi

2022

International Journal of Polymer Science

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The major motivation behind transistor scaling is the requirement for high-speed transistors with lower fabrication costs. When the fin thickness or breadth is smaller than 10 nm in a trigate FET, charges travel in a nonconfined fashion, resulting in the creation of energy subbands and causing volume inversion. In comparison to the carrier near a surface inversion layer, volume inversion experiences less interface scattering. In large-scale integrations, we have focused on developing a 3D model for surface potential by establishing the three-dimensional Poison’s equation and building a unique fin field-effect transistor (FinFET) structure. In this context, there is a growing interest in developing a low-cost, simple solution that combines plastic (polymer) as a substrate and organic materials to create electronics such as monitors and sensors. The research examines characteristics such as silicon width, oxide thickness, doping concentration, metal work-function about gate, and various surface potentials. For different circuit configurations, it also examines the DC and AC characteristics of the FinFET structure. A differential amplifier is built for RF application based on the device specifications. This work is aimed at improving the semiconductor design structure by adjusting device parameters, analyzing the results, establishing the best FinFET device preferences, and selecting an application for the optimized device. The 3D Poisson’s equation may be used to create an analytical model of a trigate nanosize FinFET, which can then be tested using a TCAD simulator. By constructing such a FinFET, we can structure and analyze various electrostatic parameters. To facilitate the creation of FinFET-based circuits, including product development, a novel transistor needs a creative device basis. The infrastructure’s support denotes a computationally advantageous numerical model that accurately depicts a FinFET. The work presents a compact model for semiconductor manufacturing that permits separate IC productions while achieving higher levels of excellence and using less power. The design outperforms the CMOS by 22.7% in gain, 31.48% in power consumption, and 12.72% in CMRR, while operating at a 5 GHz unity gain frequency.

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Section: Two-stage Operational Amplifier Designmentioning

confidence: 99%

Design of Polymer-Based Trigate Nanoscale FinFET for the Implementation of Two-Stage Operational Amplifier

Suman¹,

Cheepurupalli²,

Allasi

2022

International Journal of Polymer Science

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“…The Hf-based wafer in this work is a bulk type. However, the tested devices for the SiON-based one are on the buried oxide (BOX) layer with a floating bulk [6,7], as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Degradation and Recovery of SiON<sub>x</sub> and Hf-Based Dielectric under Electrical-Field Stress

Chen

Wang

et al. 2020

KEM

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Using the electrical-field (E-field) stress at the positive and negative directions to generate the degradation and form the recovery effect is a useful metrology to evaluate the integrity of gate dielectric. This consequence deeply influences the drive current of 2D MOSFET or 3D FinFET species. According to the experimental results with the short and long-term stresses, we found the electrical performance of Hf-based tested devices represented the better recovery than that of SiON-based ones. And the recovery effect is more regular, not only in VT shift, but in gate leakage due to the high-k dielectric probably providing the polar effect and more trap assistants.

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