A high-breakdown-voltage β-Ga<sub>2</sub>O<sub>3</sub> nanoFET with a beveled field-plate structure

Kim, Jeongmin; Kim, Hyeongwoo; Kang, Inho; Kim, Junghun; Ko, Seokjin; Bae, Jinho; Kim, Jihyun

doi:10.1039/d4tc00106k

Cited by 3 publications

References 49 publications

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Etching of Ga₂O₃: an important process for device manufacturing

Xi,

Liu,

Fang

et al. 2024

J. Phys. D: Appl. Phys.

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Etching plays a key role in processing and manufacturing electronic and optoelectronic devices. For ultra-wide bandgap semiconductor gallium oxide (Ga2O3), its etching investigations and evolution mechanism are still at the earlier stage, and some more research gumption should be invested. In this review, we make a summary on the etching of Ga2O3, including dry (plasma) etching, wet chemical etching, and photoelectrochemical etching, and discuss the etching results, existing problems, and feasible solutions, in order to provide guidance and advises for furtherly developing the Ga2O3 etching and Ga2O3-based electronic and optoelectronic devices.

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Etching of Ga₂O₃: an important process for device manufacturing

Xi,

Liu,

Fang

et al. 2024

J. Phys. D: Appl. Phys.

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Gate mesa terminal with drain-field-plated β-Ga₂O₃ MOSFET with ultra-high power figure of merit

Zhang,

Luan,

Cheng

2024

Eng. Res. Express

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In this article, we propose a novel device structure for a gate mesa terminal (GMT) with a drain field plate, aimed at improving the breakdown voltage (Vbr) and reducing the on-resistance (Ron) of lateral β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET). Through the design of the GMT structure, the peak electric field of β-Ga2O3 MOSFET is directed towards the passivation layer, effectively suppressing the electric field in the epitaxial layer, resulting in a higher Vbr. The optimal Vbr, specific on-resistance (Ron,sp) and maximum transconductance (gm) of various GMT structures are 4827 V, 9.9 mΩ·cm2 and 15.32 mS/mm, respectively. These values are 2.63 times, 0.88 times and 1.25 times higher than those of the non-GMT structure. Furthermore, with a doping concentration of epitaxial layer is 1×1016 cm-3, the GMT achieves an enhanced threshold voltage of +0.26 V. The optimal power figure of merit (PFOM) of 1.914 GW/cm2 is obtained by simulating the electrical properties of different bevel Angles, field plate parameters, epitaxial layer doping concentration and mesa thickness. This innovative structure presents a new design concept for the next generation of high voltage and high-power devices rated above 4 KV.

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Breakdown voltage enhancement techniques in β-Ga₂O₃ nanomembrane MESFETs

Sengupta,

Deo Meshram,

Bhattacharyya

et al. 2024

2024 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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A high-breakdown-voltage β-Ga₂O₃ nanoFET with a beveled field-plate structure

Abstract: The three-terminal off-state breakdown voltage of the β-Ga2O3 nanoFET with beveled field-plate (FP) was obtained at +441 V, enhanced by downstream plasma-etched 60° h-BN FP structure.

Cited by 3 publications

References 49 publications

Etching of Ga₂O₃: an important process for device manufacturing

Etching of Ga₂O₃: an important process for device manufacturing

Gate mesa terminal with drain-field-plated β-Ga₂O₃ MOSFET with ultra-high power figure of merit

Breakdown voltage enhancement techniques in β-Ga₂O₃ nanomembrane MESFETs

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A high-breakdown-voltage β-Ga2O3 nanoFET with a beveled field-plate structure

Abstract: The three-terminal off-state breakdown voltage of the β-Ga2O3 nanoFET with beveled field-plate (FP) was obtained at +441 V, enhanced by downstream plasma-etched 60° h-BN FP structure.

Cited by 3 publications

References 49 publications

Etching of Ga2O3: an important process for device manufacturing

Etching of Ga2O3: an important process for device manufacturing

Gate mesa terminal with drain-field-plated β-Ga2O3 MOSFET with ultra-high power figure of merit

Breakdown voltage enhancement techniques in β-Ga2O3 nanomembrane MESFETs

Contact Info

Product

Resources

About

A high-breakdown-voltage β-Ga₂O₃ nanoFET with a beveled field-plate structure

Etching of Ga₂O₃: an important process for device manufacturing

Etching of Ga₂O₃: an important process for device manufacturing

Gate mesa terminal with drain-field-plated β-Ga₂O₃ MOSFET with ultra-high power figure of merit

Breakdown voltage enhancement techniques in β-Ga₂O₃ nanomembrane MESFETs