A high capacitive-coupling ratio (HiCR) cell for 3 V-only 64 Mbit and future flash memories

Hisamune, Yosiaki S.; Kanamori, Kohji; Kubota, T.; Suzuki, Yoshikazu; Tsukiji, Masaru; Hasegawa, Eiji; Ishitani, Akihiko; Okazawa, T.

doi:10.1109/iedm.1993.347408

Cited by 17 publications

(6 citation statements)

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“…HiCR cells were first presented in 1993 for 3-V-only 64-Mb Flash memories [81]. They are contactless cells with a high capacitive coupling ratio, programmed and erased by FN tunneling.…”

Section: G High Capacitive Coupling Ratiomentioning

confidence: 99%

Flash memory cells-an overview

et al. 1997

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“…HiCR cells were first presented in 1993 for 3-V-only 64-Mb Flash memories [81]. They are contactless cells with a high capacitive coupling ratio, programmed and erased by FN tunneling.…”

Section: G High Capacitive Coupling Ratiomentioning

confidence: 99%

Flash memory cells-an overview

et al. 1997

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“…The electric potential of the ferro‐floating layer is carried by the gate voltage, which is scaled by the capacitance‐coupling ratio ( γ = C (blk+ff) /( C (blk+ff) + C tun )) when the charges are absent from the ferro‐floating layer. Here, C (blk+ff) is the series capacitance of the blocking and ferro‐floating layers, and C tun is the capacitance of the tunneling layer 52 . In the ferro‐floating memory, the injected charges by the tunneling mechanism and the polarization charges by the ferroelectric switching mechanism exist in the ferro‐floating layer.…”

Section: Resultsmentioning

confidence: 99%

“…Here, C (blk+ff) is the series capacitance of the blocking and ferro-floating layers, and C tun is the capacitance of the tunneling layer. 52 In the ferro-floating memory, the injected charges by the tunneling mechanism and the polarization charges by the ferroelectric switching mechanism exist in the ferro-floating layer. Therefore, the electric potential is modified by (Q store + Q ferro )/(C (blk+ff) + C tun ), where Q store is the stored charge in the ferro-floating layer and Q ferro is the polarization charge in the channel side of the ferro-floating layer.…”

Section: Device Scheme and Operation Of The Vdw-based Ferro-floating ...mentioning

confidence: 99%

Ferro‐floating memory: Dual‐mode ferroelectric floating memory and its application to in‐memory computing

Park

Lee

et al. 2022

InfoMat

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Various core memory devices have been proposed for utilization in future in‐memory computing technology featuring high energy efficiency. Flash memory is considered as a viable choice owing to its high integration density, stability, and reliability, which has been verified by commercialized products. However, its high operating voltage and slow operation speed issues caused by the tunneling mechanism make its adoption in in‐memory computing applications difficult. In this paper, we introduce a dual‐mode memory device named “ferro‐floating memory”, fabricated using van der Waals (vdW) materials (h‐BN, MoS2, and α‐In2Se3). The vdW material, α‐In2Se3, acts as a polarization control layer for the ferroelectric memory operation and charge storage layer for the conventional flash memory operation. Compared to the tunneling‐based memory operation, the ferro‐floating memory operates 1.9 and 3.3 times faster at 6.7 and 5.8 times lower operating voltages for programming and erasing operations, respectively. The dual‐mode operation improves the linearity of conductance change by 5 times and the dynamic range by 48% through achieving conductance variation regions. Furthermore, we assess the effects of the variation in device operating voltage on neural networks and suggest a memory array operating scheme for maximizing the networks' performance through various training/inference simulations.

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“…In the conventional concept, the floating gate voltage is determined by the control gate voltage through a coupling ratio of γ=C ono /(C ono +C tun ) [7], where C ono is the control gate to floating gate capacitance and C tun is the tunnel oxide capacitance. As the design rule of NAND flash memory is scaled down, it is hard to ignore its parasitic effects on cell operation cell.…”

Section: Resultsmentioning

confidence: 99%