Abstract:Despite the continuous downscaling of complementary metal–oxide –semiconductor (CMOS) devices, various scenarios of technology have also been proposed toward the shrinking of semiconductor memory. In this paper, a high-density memory (HDM) has been proposed on the basis of band-to-band tunneling (BTBT) for low-power, high density, and high-speed memory applications. The geometric structure and electrical properties have been demonstrated by using TCAD tools. Typical memory operations including read, program, an… Show more
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