A High Dynamic Range CMOS Variable Gain Amplifier for Mobile DTV Tuner

Xiao, Jie; Mehr, I.; Silva-Martí­nez, J.

doi:10.1109/jssc.2006.889386

Cited by 86 publications

(39 citation statements)

References 9 publications

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“…However, the resistive type VGA suffered from the attenuation-proportional degradation of NF at low gain mode. On the other hand, the capacitive divider type RF VGA is also found in some literatures [2,3]. Since NF of the capacitive type RF VGA increases very slightly even as the gain goes down, it is very beneficial to enhance the receiver linearity without degrading SNR.…”

Section: Introductionmentioning

confidence: 95%

A precisely gain controlled RF front end for T-DMB tuner ICs

Lee

et al. 2012

IEICE Electron. Express

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Abstract:A precisely gain controlled RF front end is developed for T-DMB tuner IC applications. A precise RF gain control with 50 dB dynamic range is achieved in RF VGA by employing a capacitive ladder type attenuator. The proposed method enables us to design and analyze very fine gain step VGA concretely. Implemented in 0.13 µm CMOS, the tuner RF front end consumes 9.7 mA at 1.2 V supply. Measured results are NF < 1.5 dB at the maximum gain and the accurate 1 dB gain step is obtained.

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Section: Introductionmentioning

confidence: 95%

A precisely gain controlled RF front end for T-DMB tuner ICs

Lee

et al. 2012

IEICE Electron. Express

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“…The proposed amplifier needs no diodes and resistors as the previous amplifiers need. 3 The second proposed digitally programmable gain amplifier Current conveyors (CCIIs) are used as an analogue switch (CCAS) to transfer the voltage from nodes Y to nodes X. Nodes Z is not in use [13].…”

Section: Cm-mentioning

confidence: 99%

“…The applications are found in particular area such as communication receiver and terrestrial mobile digital television [1][2][3]. In the past, the digitally programmable gain amplifiers with arbitrary range of integer values [4][5][6][7] had been investigated for the possibility of minimizing the number of switches and resistors, and determining the option number of equal valued resistors required for fabricating resistor network.…”

Section: Introductionmentioning

confidence: 99%

“…Due to the large current required of high frequency operational amplifier, the area consumption is increased [10]. For high frequency applications, open-loop amplifiers using variable transconductance (g m ) or variable output loads (R L ) [2,3] techniques are provided. However, the voltage gain of these amplifiers is sensitive to process and temperature variations.…”

Section: Introductionmentioning

confidence: 99%

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Two digitally programmable gain amplifiers based on current conveyors

Angkeaw

Prommee

2010

Analog Integr Circ Sig Process

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Two digitally programmable gain amplifiers based on current conveyors (CCIIs) are presented. The first digitally programmable gain amplifier consists of a CCII, an operational transconductance amplifier (OTA), and current mirrors. The second one is composed of current conveyor analogue switches (CCASs). Both proposed digitally programmable gain amplifiers do not need switches but they maintain the linear gain at any digital signal levels similar to the digitally programmable gain amplifier using switches; hence the proposed amplifiers are easier to realize, use narrower chip area, and consume lower power. The first proposed amplifier is verified by constructing the circuit using the CCII in an AD844 IC, the OTA in a CA3080 IC, and some bipolar current mirrors. The second proposed amplifier is verified by simulating the circuit using the parameters extracted from the layout (including parasitic capacitance) in the 0.25 lm MOS technology, the level 49 MOS model obtained through MOSIS is used. The results show that the operations of two proposed amplifiers are in accordance with the theories.

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“…In this work we adopted the current steering technique [7,8], which is known for its linear gain control with low DC power dissipation with rather simple topology. The current steering technique is favourable especially for low-noise amplifiers as the noise generated by the gain-control transistors has a relatively low effect on the overall NF compared to other approaches.…”

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confidence: 99%

58–72 GHz CMOS wideband variable gain low-noise amplifier

Kim

et al. 2011

Electron. Lett.

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A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3 dB bandwidth of 14 GHz (58-72 GHz) is developed in a 65 nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8 dB with a 1 dB gain flatness of 10 GHz (60-70 GHz). With tuning voltage adjusted from 0.8 to 2.8 V, the gain and noise figure are varied from 21.8 to 12.8 dB and from 4.2 to 5.7 dB, respectively, at 64 GHz. Input P 21dB was measured to be 222.1 dBm. DC power consumption is 36 mW with V DD ¼ 1.2 V and the chip size is 0.75 × 0.65 mm.Introduction: The availability of the frequency band around 60 GHz for unlicensed use in many regions in the world is attracting growing attention for broadband wireless communication applications. Along with the high attenuation level in the Earth's atmosphere around this band, the ample bandwidth available with this band makes it a highly attractive option, particularly for the wireless personal area network (WPAN) for the multi-Gbit/s short-range data link. According to the standard developed for this application, the band for WPAN systems encompasses four channels ranging from 57 to 66 GHz [1]. This requires the low-noise amplifier (LNA) to have a bandwidth wide enough to cover this range, preferably with a flat gain throughout this band. In addition, the gain controllability is desired for the LNA to maintain high linearity as well as constant output power of the entire receiver system against variation in the input signal power level. There have been recent reports on variable gain low-noise amplifiers (VGLNAs) intended for 60 GHz application based on either Si CMOS [2] or SiGe BiCMOS [3,4], but their bandwidths were rather limited. In this Letter, a wideband VGLNA for 60 GHz WPAN application is developed in a 65 nm RFCMOS technology

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A High Dynamic Range CMOS Variable Gain Amplifier for Mobile DTV Tuner

Cited by 86 publications

References 9 publications

A precisely gain controlled RF front end for T-DMB tuner ICs

A precisely gain controlled RF front end for T-DMB tuner ICs

Two digitally programmable gain amplifiers based on current conveyors

58–72 GHz CMOS wideband variable gain low-noise amplifier

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