A high-efficiency and high-gain, plastic packaged GaN HEMT for 3.5-GHz-band LTE base stations

Kosaka, Naoki; Fujiwara, Shigeru; Okamura, Atsushi; Chomei, K.; Sasaki, Y.; Horiguchi, Kenichi; Katayama, Hideki; Inoue, Akihisa

doi:10.1109/rfit.2016.7578168

Cited by 10 publications

(3 citation statements)

References 5 publications

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“…Compare to other published DPA solutions using GaN devices in recent years, this design presents a wide band, extend OBO, and high saturation power in symmetrical DPAs, Table 1 summarizes the performance of the designed DPA and other states of the art PAs. This designed DPA has a 100 MHz wider bandwidth than the simulation result given by Bhardwaj and Kitchen, 11 200 MHz wider bandwidth, larger OBO, more than 4.5 dB higher peak power, and 4% better OBO drain efficiency than Kosaka et al, 12 about 2 dB higher peak power compared to Lv et al, 13 and 100 MHz wider bandwidth, higher peak power compared with the simulation result of Roychowdhury and Kitchen 14 …”

Section: Resultsmentioning

confidence: 63%

A novel compact asymmetric Doherty PA design using symmetric transistors

Jin

Cheng

Wang

et al. 2022

Micro & Optical Tech Letters

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A novel 7.2 dB output power back off Doherty power amplifier (DPA) based on asymmetrical load is proposed using two same transistors in this paper. To get maximum efficiency at back-off output power and the largest saturate output power level simultaneously, the carrier power amplifier (PA) is matched to the maximum efficiency region when peaking PA is almost off, and both of the two PAs are matched to maximum power region to get largest output power. According to the proposed design methodology, high efficiency at back-off power and high peak power DPA is designed and fabricated with two Cree's GaN HEMT CGH40010F devices. Measurements results show that the saturated output power of the DPA is over 44.5 dBm, the drain efficiency when 7.2 dB output power back off and saturate power are above 42% and 53%, respectively, in the range of 3.4-3.8 GHz. Meanwhile, better than −47.8 dBc adjacent channel leak power ratio can be achieved with digital predistortion under 20 MHz LTE signal testing at 3.4 GHz, the final design size is only 14 × 12 cm 2 . K E Y W O R D Sdigital predistortion, Doherty power amplifier, GaN HEMT, peak-to-average power ratio

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Section: Resultsmentioning

confidence: 63%

A novel compact asymmetric Doherty PA design using symmetric transistors

Jin

Cheng

Wang

et al. 2022

Micro & Optical Tech Letters

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“…The carrier amplifier is designed to operate as a class AB amplifier whereas the peaking amplifier is designed to operate as class C amplifier. The input signal is split between the two amplifiers, where the carrier amplifier should be saturated at the back-off input power; at the same power level, the peaking amplifier starts feeding current to the output till it becomes saturated at the peak region, where the two power amplifiers give their maximum designed output power [5][6][7].…”

Section: Doherty Conceptmentioning

confidence: 99%

“…The idea of the Doherty depends on the so-called active load-pull technique [1]. Where The operation of the Doherty power amplifier can be divided into three main regions [5][6][7][8][9]:…”

Section: Fig 1 Doherty Power Amplifier Structure [2]mentioning

confidence: 99%

A 70-W Asymmetrical Doherty Power Amplifier for 5G Base Stations

Abdulkhaleq

Al‐Yasir

Parchin

et al. 2018

Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering

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Much attention has been paid to making 5G developments more energy efficient, especially in view of the need for using high data rates with more complex modulation schemes within a limited bandwidth. The concept of the Doherty power amplifier for improving amplifier efficiency is explained in addition to a case study of a 70W asymmetrical Doherty power Amplifier using two GaN HEMTs transistors with peak power ratings of 45W and 25W. The rationale for this choice of power ratio is discussed. The designed circuit works in the 3.4GHz frequency band with 200 MHz bandwidth. Rogers RO4350B substrate with dielectric constant εr=4.66 and thickness 0.035 mm is used. The performance analysis of the Doherty power amplifier is simulated using AWR MWO software. The simulated results showed that 54-64% drain efficiency has been achieved at 8 dB back-off within the specified bandwidth with an average gain of 10.7 dB.

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