A high efficiency complementary GaAs power FET technology for single supply portable applications

Abstract

A high efficiency enhancement mode power heterostructure FET has been developed for single supply podable applications. The device requires only a single 3V supply for operation, making it an ideal candidate for portable applications. At 850 MHz, a 1 .O pm x 12 mm N-type FET exhibited a power output of +30.7 dBm, power gain of 10.6 dB, and a power-added efficiency of GO%, at a drain to source voltage of 3V, and drain to source quiescent current of 150 mA. This device was fabricated on a standard Complementary G a As (CGaAsTM) process flow, which is capable of simultaneously building lowvoltage, low-power digital circuits (200MHz), high-speed digital ciircuits (5 GHz), and RF power circuits (900 MHz).

Optimum Au/WSi 0.3 μm-gate-length n-HIGFETs for microwave power applications in X band

“…At this time, analog HIGFETs are fabricated with long channel technology (1 m down to 0.5 m) [3], and devoted to Manuscript 900 MHz and 1.8 GHz wireless applications [4]. Typical transition frequency is 25 GHz.…”