“…The excited electrons then migrate to the CB of ZnO, while the positive holes in the VB of ZnO were transferred to the VB of g-C 3 N 4 , reducing recombination [51,52]. Notably, in the presence of GO, the photoinduced electrons in the ZnO CB migrate to GO as the work function of GO (-4.42 eV vs Vacuum and -0.08 eV 14 vs NHE) is lower than that of the work function of ZnO (-4.05 eV vs Vacuum and -0.5 eV vs NHE) [50][51][52][53][54], and the GO serves as an acceptor of electrons and suppresses charge recombination effectively. The charge carriers subsequently migrate to the composite surface, producing hydroxyl and superoxide radicals with water and dissolved oxygen, respectively, which can then proceed to oxidize MB [31].…”