A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz

Yu, Xinxin; Zhou, Jianjun; Qi, Chengjun; Cao, Zhengyi; Kong, Yuechan; Chen, Tangsheng

doi:10.1109/led.2018.2862158

Cited by 106 publications

(39 citation statements)

References 17 publications

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“…Since p-and n-type doping of diamond is relatively difficult, the two-dimensional hole gas (2DHG) formed at the hydrogen terminated diamond (H-diamond) surface has been widely used to fabricate diamond field effect transistors (FETs) [4]- [7]. Presently, H-diamond FETs have achieved a maximum drain current, cutoff frequency (f T ), and maximum oscillation frequency (f max ) of 1.3 A/mm [8], 70 GHz [9], and 120 GHz [7], respectively. A high breakdown voltage of over 2 kV [10] has also been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Ren

et al. 2020

IEEE Access

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C-H diamond metal-oxide-semiconductor field effect transistors with different structures were fabricated on the same polycrystalline diamond plate. Devices A and B with 25-nm-thick high temperature (300 • C) atomic layer deposition grown Al 2 O 3 dielectric have the same source-to-drain distance of 6 µm and different gate length of 2 µm and 6 µm, respectively. Both devices show ultra-high on/off ratio of over 10 10 and ultra-low gate leakage of below 10 −10 A and continuous measurement stability. Device B with the source/drain-channel interspaces eliminated has achieved an on resistance of 46.20 •mm, which is record low in the reported 6-µm H-diamond MOSFETs with the gate dielectric prepared at high temperature (≥ 300 • C). Meanwhile, device B shows larger drain current in a large portion of the linear region at V GS = −6 V, and a just slightly smaller I Dmax compared with device A though its L G is three times of that of device A. A simple model of I D was used to explain the physics behind this phenomenon. In addition, the breakdown voltage is 145 V for device A and 27 V for device B, corresponding to the average breakdown field of about 0.72 MV/cm and 10.8 MV/cm, respectively.

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Section: Introductionmentioning

confidence: 99%

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Ren

et al. 2020

IEEE Access

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“…An example is shown in Figure . Al 2 O 3 overcoated diamond devices have demonstrated a wide operational temperature range, −263 (10 K) to 400 °C, high voltage operation > 1 kV, unity‐current‐gain frequency, f T , of 70 GHz, and maximum frequency of oscillation, f max , of 120 GHz . The high voltage operation and inherent high thermal conductivity, ≈20 times that of Si, demonstrates the feasibility of a diamond FET superior to those formed in other semiconductors.…”

Section: Conductive Diamond For Fetsmentioning

confidence: 99%

Progress Toward Diamond Power Field‐Effect Transistors

Geis

Wade²,

Wuorio

et al. 2018

Physica Status Solidi (a)

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Diamond's properties (highest thermal conductivity, high hole & electron mobilities, & high electric breakdown field) predict that diamond field‐effect transistors (FETs) will have superior high‐power high‐frequency performance over FETs formed in other semiconductors. The development of diamond FETs is limited by a lack of quality substrates & the high ionization energy of the primary dopant, boron (B). This high ionization energy results in a resistance too high for FETs. Fortunately, recent developments are addressing these shortcomings. Single‐crystal diamond substrates ≈4 inches have been demonstrated. Further, two approaches address the dopant issue. When the surface of diamond is terminated in H, a surface p‐type conductive layer forms. FETs made using this layer demonstrate competitive high‐frequency performance, though manufacturability of this type of device has yet to be worked out. The second solution to doping uses delta doping by B. A thin <2‐nm layer doped with B at >1020 cm−3 is sandwiched within undoped diamond. This structure mitigates B's high ionization energy by producing an acceptor subband with ≈100% of the B is ionized. Recent reports of delta‐doped diamond have channel resistances suitable for device applications. This article reviews the state of the art for FET and substrate development.

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“…Despite the great progress in diamond MOSFETs based on the surface conductivity of H‐diamond, few efforts have been made in the reliability analysis of the diamond MOSFETs. The device reliability, such as the threshold voltage and drain current stability induced by bias stress, should be addressed before practical applications.…”

Section: Introductionmentioning

confidence: 99%

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

Yang

Sang

Liao

et al. 2019

Physica Status Solidi (a)

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Recent marked advances in diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) have raised the issue of gate reliability. Herein, the threshold voltage stability of MOSFETs based on hydrogen-terminated diamond surface conductivity is examined. The electrical output characteristic curves are characterized by cyclic gate sweeping from reverse to forward gate bias (RF) and from forward to reverse gate bias (FR), respectively. The characteristics of drain current versus drain voltage are affected by the gate bias sweeping direction. Marked hysteresis is also observed in the transfer curves for the RF and FR gate sweeping. The different gate sweeping directions induce threshold voltage variation and hole mobility change. The facts that 1) no extra interface states are generated due to gate sweeping and 2) the trapped charge density depends on the gate oxide thickness, reveal that charge trapping occurs at the border of the gate oxide.

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A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz

Cited by 106 publications

References 17 publications

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Progress Toward Diamond Power Field‐Effect Transistors

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

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A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz

Cited by 106 publications

References 17 publications

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3Gate Dielectric

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3Gate Dielectric

Progress Toward Diamond Power Field‐Effect Transistors

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

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Product

Resources

About

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric