2023
DOI: 10.1109/tcsii.2022.3221334
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A High Frequency MOS-Based Floating Charge-Controlled Memcapacitor Emulator

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Cited by 5 publications
(4 citation statements)
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“…2(a). This realization involves the integration of two Arbel-Goldminz (AG) transconductance cells [33]. In this configuration, the transconductance gains gmF and g mS are primarily determined by the transconductance of the output transistors.…”
Section: Proposed Configurationsmentioning
confidence: 99%
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“…2(a). This realization involves the integration of two Arbel-Goldminz (AG) transconductance cells [33]. In this configuration, the transconductance gains gmF and g mS are primarily determined by the transconductance of the output transistors.…”
Section: Proposed Configurationsmentioning
confidence: 99%
“…In the equation provided, μ represents the effective carrier mobility, C ox denotes the gate-oxide capacitance per unit area, W and L represent the effective channel width and length of the i-th MOS transistor, and K i corresponds to the gain factor of the Arbel-Goldminz cells. It is important to note that the AG cells employed in this configuration do not introduce additional imperfections in terms of voltage and current gain, unlike certain other active blocks such as current-conveyers [33]. These alternative active blocks are often constrained by limitations in slew rate, bandwidth, and dynamic ranges.…”
Section: Proposed Configurationsmentioning
confidence: 99%
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