A High-Gain mm-Wave Amplifier Design: An Analytical Approach to Power Gain Boosting

Bameri, Hadi; Momeni, Omeed

doi:10.1109/jssc.2016.2626340

Cited by 99 publications

(42 citation statements)

References 30 publications

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“…Correspondingly, high-Q passive structures can be adopted. That also allows for circuit configurations tuned at transistor optimal conditions, such as the maximum available gain near f max [8]- [10]. Peak circuit performance, therefore, can be maintained across a broad frequency range in a relay manner.…”

Section: Thz-comb Radar For Broadband Sensingmentioning

confidence: 99%

“…C 4 and C 5 ) is used to create negative capacitance that cancels the C gd of the transistors. Although this neutralization scheme does not provide the highest possible gain compared to the techniques in [8]- [10], [21], the device unilaterization that this scheme enables allows for higher stability and broader bandwidth [23]. The simulated gain of the amplifier chain is shown in Fig.…”

Section: B Thz Transmitter Chainmentioning

confidence: 99%

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A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

Wang

Chen

et al. 2021

IEEE J. Solid-State Circuits

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This paper presents a CMOS-based, ultrabroadband FMCW (frequency-modulated continuous-wave) radar using a terahertz (THz) frequency-comb architecture. The high-parallelism spectral sensing provided by this architecture significantly reduces the bandwidth requirement for the THz front-end circuitry and ensures that the peak output power and sensitivity are maintained across the entire band of operation. The speed and linearity of frequency chirping are also improved by the comb system. An antenna-sharing scheme based on a square-mixer-first architecture is used, which not only leads to compact size, but also facilitates the stitching of the multi-channel radar IF data. To avoid the usage of high-cost silicon lens in the on-chip broadband radiation, a multi-resonance substrate-integrated-waveguide (SIW) antenna structure is innovated, which provides 15% fractional bandwidth for impedance matching. As a proof-of-concept, a five-tone radar prototype that seamlessly scan the entire 220-to-320-GHz band is demonstrated. In the measurement, the multi-channel-aggregated EIRP (equivalent isotropically-radiated power) is 0.6 dBm, and is further boosted to ∼20 dBm with a TPX (polymethylpentene) lens. The measured minimum single-sideband noise figure (SSB NF) of the receiver, including the antenna loss and baseband amplifier, is 22.8 dB. Due to the comb-architecture, the EIRP and NF values fluctuate by only 8.8 and 14.6 dB, respectively, across the 100-GHz bandwidth. The chip has a die size of 5 mm 2 and consumes 840 mW of DC power. This work marks the first CMOS demonstration of THz radar, and achieves record bandwidth and ranging resolution among all radar front-end chips.

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Section: Thz-comb Radar For Broadband Sensingmentioning

confidence: 99%

Section: B Thz Transmitter Chainmentioning

confidence: 99%

A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

Wang

Chen

et al. 2021

IEEE J. Solid-State Circuits

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“…By adopting the proposed design technique, the simultaneous output power-and gainmatching can be achieved, which maximizes not only smallsignal power gain but also large-signal output power performances simultaneously. Although G max -core with threepassive-components based amplifiers have been reported in [26][27][28], these works have only focused on small-signal performances for high-gain without considerations of largesignal performance. Therefore, the large-signal performances such as P sat and OP 1dB are poor in [26][27][28].…”

Section: Introductionmentioning

confidence: 99%

A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core

et al. 2021

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This paper proposes a simultaneous output power-and gain-matching technique in a sub-THz power amplifier (PA) design based on a maximum achievable gain (G max ) core. The optimum combination of three-passive-elements-based embedding networks for implementing the G max -core is chosen considering the small-and large-signal performances at the same time. By adopting the proposed technique, the simultaneous output power-and gain-matching can be achieved, maximizing the small-signal power gain and large-signal output power simultaneously. A 150 GHz single-ended two-stage PA without power combining circuit is implemented in a 65-nm CMOS process based on the proposed technique. The amplifier achieves a peak power gain of 17.5 dB, peak power added efficiency (PAE) of 13.3 and 16.1 %, saturated output power (P sat ) of 10.3 and 9.4 dBm, and DC power consumption of 86.3 and 52.4 mW, respectively, under the bias voltage of 1.2 and 1 V, which corresponds to the highest PAE, gain per stage and P out per single transistor among other reported CMOS D-band PAs. INDEX TERMS Amplifier, power amplifier, CMOS, gain-boosting, maximum achievable gain (G max ), terahertz (THz), simultaneous conjugate matching, load-pull, 6G communication system.

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“…Nevertheless, it is still not an effective way to make maximum use of the active devices. [26,27,28] introduced a solution to realize the maximum available gain. Unfortunately, the structure suffers from bulky passive devices and inflexible biases for active devices.…”

Section: Introductionmentioning

confidence: 99%

A high gain 79-GHz low noise amplifier using inductor-embedded neutralization technique

Cheng

Mei

et al. 2021

IEICE Electron. Express

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This paper presents a 79 GHz low noise amplifier (LNA) design featuring high gain fabricated in a 40-nm CMOS process. To make better use of active devices, we propose an inductor-embedded neutralization technique. The implemented prototype consists of four-stage common-source amplifiers using the proposed technique and transformer-based matching networks. The measurement results show that the amplifier realizes a peak gain of 23 dB at 79 GHz with 14.4 mW power dissipation and 0.4 mm 2 area occupation. The LNA achieves a minimum noise figure (NF) of 6.3 dB.

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A High-Gain mm-Wave Amplifier Design: An Analytical Approach to Power Gain Boosting

Cited by 99 publications

References 30 publications

A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core

A high gain 79-GHz low noise amplifier using inductor-embedded neutralization technique

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