A high gain SiGe-GaN switching power amplifier in the GHz-range

Heck, Stefan; Brackle, A.; Berroth, Manfred; Maroldt, S.; Quay, R.

doi:10.1109/wamicon.2012.6208469

Cited by 4 publications

(1 citation statement)

References 7 publications

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“…The bottom-signal is defined between 0 V and 1 V, the middle-signals between 1 V and 2 V and the top-signal between 2 V and 3 V. To be able to correct the slopes of each signal delay cells are used with which Fig. 10 in [4] 2 Value taken from Fig. 8 in [5] the rising or the falling slope can be delayed.…”

Section: B Circuit Overviewmentioning

confidence: 99%

A CMOS switching mode amplifier with 3 V output swing for continuous-wave frequencies up to 4 GHz

Bieg

Schmidt

Berroth

2015

2015 Asia-Pacific Microwave Conference (APMC)

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In this paper the design of a voltage-mode switching mode amplifier in a 65-nm CMOS process in the GHz range is described. The amplifier can be operated with a rectangular drive signal with 50 % duty cycle up to 4 GHz and pseudo random bit sequences up to 4 GBit/s. The calibrated broadband PAE of the amplifier chip is 22 % at 2 GHz, 13 % at 3 GHz and 7 % at 4 GHz for a rectangular drive signal with 50 % duty cycle. The broadband output power into 50 Ω is 15.3 dBm for 2 GHz, 14 dBm for 3 GHz and 12 dBm for 4 GHz for a single ended measurement. Index Terms -CMOS integrated circuits, Broadband amplifiers, Microwave amplifiers I. INTRODUCTION In today's mobile communication systems high frequency power amplifier are usually linear power amplifiers. Despite their good linearity they suffer from bad efficiency. Switching mode amplifiers (SA) are very efficient. In theory a SA achieves 100 % efficiency. Recent publications show efficiencies beyond 75 % [1], [2]. A brief overview over recently published PAs is given in Table I. This paper describes a switching mode amplifier in a 65 nm CMOS process. Compared to SiGe or GaN the achievable PA bandwidth and the output power in CMOS are smaller. However CMOS itself is cheaper and the PA can be integrated onto the same die with the baseband processor. The breakdown voltage of the CMOS transistors is 1 V and thus small for power applications. In this paper a solution is presented how to achieve an output swing of 3 V by stacking the transistors.

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Section: B Circuit Overviewmentioning

confidence: 99%

A CMOS switching mode amplifier with 3 V output swing for continuous-wave frequencies up to 4 GHz

Bieg

Schmidt

Berroth

2015

2015 Asia-Pacific Microwave Conference (APMC)

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GaN HEMT-Based >1-GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865-MHz Power Conversion Applications

Mehrotra

Arias

Neft

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit

Maroldt

Brückner

Quay

et al. 2014

2014 IEEE MTT-S International Microwave Symposium (IMS2014)

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An inverter-based digital switch-mode driver circuit, highly-integrated with a GaN power transistor is presented. The layout is fully scalable in output power and therefore suitable for amplifiers with power levels of higher than 10 W. The circuit enables a switch-mode operation from DC to 3 GHz. A consistent analysis of digital switching measurements and active harmonic load-pull results is performed. Measurements at 2 GHz and 30 V yield a drain efficiency of 82 % and 6 W of output power, while a gain up to 35 dB and more than 76 % overall circuit efficiency were achieved

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A high gain SiGe-GaN switching power amplifier in the GHz-range

Cited by 4 publications

References 7 publications

A CMOS switching mode amplifier with 3 V output swing for continuous-wave frequencies up to 4 GHz

A CMOS switching mode amplifier with 3 V output swing for continuous-wave frequencies up to 4 GHz

GaN HEMT-Based >1-GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865-MHz Power Conversion Applications

A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit

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