2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2012
DOI: 10.1109/csics.2012.6340112
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A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

Abstract: A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 µm InP HBT technology. High speed switching functionality in the amplifier is achieved using base-collector diodes rather than switched-emitter-followers (SEF). Operating with −5 V and −2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of −30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.

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Cited by 7 publications
(2 citation statements)
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“…The base collector diode architecture offers a bandwidth even wider than that of the diode bridge T&H architecture. It also offers good linearity, a large dynamic range and good stability [5].…”
Section: Tandh Architecturesmentioning
confidence: 99%
“…The base collector diode architecture offers a bandwidth even wider than that of the diode bridge T&H architecture. It also offers good linearity, a large dynamic range and good stability [5].…”
Section: Tandh Architecturesmentioning
confidence: 99%
“…These THA circuits need a large bandwidth, a good linearity, a high sampling rate with an excellent isolation and low losses during hold mode. High sampling and large bandwidth THAs are fabricated in InP [1, 2] or SiGe [3, 4] technologies. These THAs with 40 GSa/s [3] and 50 GSa/s [2, 4] sampling rate are based on a switched emitter follower (SEF) structure while the circuit presented in [1] uses base–collector diodes.…”
Section: Introductionmentioning
confidence: 99%