A High Performance 0.18 μm RF Switch for Multi-Standard

Abstract

This paper proposes a stacked field-effect transistor (FET) single-pole, double-throw (SPDT) RF switch which is capable of multi-standard. Negative voltage generator (NVG), logic controller, level shifter, and RF Switch branches are integrated. A PMOS self-biased strategy is proposed to improve linearity and simplify the design of the logic controller and level shifter. In order to reduce the influence of NVG, a new charge pump (CP) is proposed, and a low pass filter (LPF) is added to stabilize bias voltages. A new layout of the switch FET is proposed to minimize the product of on-state resistance and off-state capacitance (time constant). The RF switch proposed in this paper was implemented in the 0.18 μm silicon on insulator (SOI) process. The measured results show the P1 dB of 40 dBm, and the isolation (ISO) and insert loss (IL) at 1 GHz/5 GHz of 37 dB/ 22 dB, and 0.36 dB/0.55 dB. The operating frequency range is DC-6 GHz. Supply current is 37uA with the supply voltage of 2.6V.