A high performance 90 nm logic technology with a 37 nm gate length, dual plasma nitrided gate dielectric and differential offset spacer

Hornung, B.; Khamankar, R.; Niimi, H.; Goodwin, M.J.; Robertson, L. S.; Miles, D.; Kirkpatrick, B.; Alshareef, Husam N.; Varghese, A.; Bevan, M. J.; Nicollian, P.E.; Chidambaram, P.R.; Chakravarthi, S.; Gurba, A.; Zhang, X.; Blatchford, J. W.; Smith, B.; Lu, Jiong-Ping; DeLoach, J. D.; Rathsack, Benjamen M.; Bowen, C.; Thakar, G.V.; Machala, C.; Grider, T.

doi:10.1109/vlsit.2003.1221098

Cited by 2 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3(b) & (c)) and the "native" TSMC structure in the Altera chip. The outer sidewall spacers are Lshaped, and TI's extra differential offset spacers [5] were present for tuning of the source-drain extensions. We can also see that the NMOS nitride spacers have implant damage, indicating the use of memorized stress.…”

Section: Tsmc/texas Instruments/nokia 4377401 Baseband Socmentioning

confidence: 99%

From Strain to High-K/Metal Gate ¿ the 65 ¿ 45 nm Transition

James

2008

2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

View full text Add to dashboard Cite

2007 saw the introduction of the first 45-nm process node devices into the marketplace. This node is notable not only for the expected reduction in feature sizes, but also for the introduction of a high-k dielectric and metal gate into the transistor structure.At the time of paper submission, Intel is the only company manufacturing high-k/metal gates in its 45-nm product. Other leading-edge manufacturers have announced that they will start 45-nm production in 2007/2008, but have been less specific as to when they will adopt the new materials. Chipworks, as a supplier of competitive intelligence to the semiconductor and electronics industries, monitors the evolution of chip processes as they come into commercial production. Chipworks has obtained parts from the leading edge vendors, and performed structural analyses to examine the features and manufacturing processes of the devices.The paper discusses some of the different transistor structures we have seen during the evolution of 65-nm technology, and examines the first 45-nm parts introduced. The paper also looks at the interpretation of "65-nm" and "45-nm" by the different manufacturers.

show abstract

Section: Tsmc/texas Instruments/nokia 4377401 Baseband Socmentioning

confidence: 99%