A high-performance AlInAs/InGaAs/InP DHBT K-band power cell

An InP/InGaAs/InP DHBT with high power density at Ka-band

“…The DHBTs exhibit good breakdown voltages and current handling, as well as higher power density and power-added efficiency than single heterojunction bipolar transistors (SHBTs) [6,7]. Because the collector is made of InP material, which has a wide band gap, associated with a high breakdown voltage, the output power swing increases.…”

An 18-GHz 300-mW SiGe power HBT

“…4 with reference to the performance of state-of-the-art InP-based [11] and GaAs-based HBTs [12]. The high performance of SiGe HBTs demonstrated here results from a low base (sheet) resistance and high device breakdown voltages.…”

“…In spite of the large emitter width (2 m) used in the device, the overall power performance values achieved in this study are, to our knowledge, still the best among those reported SiGe power HBTs [9] and power amplifiers [7], [10] operated nearby this frequency point. For comparison, a summary of the reported RF power levels versus frequency for SiGe power [11] and AlGaAs-GaAs HBTs [12] are also shown for reference.…”

Hot-carrier induced degradation in InP/InGaAs/InP double heterojunction bipolar transistors

“…The development of InPbased DHBTs for microwave power applications has generated great interest in recent years due to their higher power density and power-added efficiency (PAE) [2,3]. For a DHBT under high power operation, the base-collector junction is highly reverse-biased.…”